This volume is a researcher's reference handbook to the many aspects of nanometer structures. Although intended as a source for the serious researcher, novices will find a great deal of interesting content. The theories covered include nanostructured thin films, photonic bandgap structures, quantum dots, carbon nanotubes, atomistic techniques, nanomechanics, nanofluidics, and quantum information processing. Modeling and simulation research on these topics have now reached a stage of maturity.

Conducting Polymers with Micro or Nanometer Structure describes a topic discovered by three winners of the Nobel Prize in Chemistry in 2000: Alan J. Heeger, University of California at Santa Barbara, Alan G. MacDiarmid at the University of Pennsylvania, and Hideki Shirakawa at the University of Tsukuba. Since then, the unique properties of conducting polymers have led to promising applications in functional materials and technologies. The book first briefly summarizes the main concepts of conducting polymers before introducing micro/nanostructured conducting polymers dealing with their synthesis, structural characterizations, formation mechanisms, physical and chemical properties, and potential applications in nanomaterials and nanotechnology. The book is intended for researchers in the related fields of chemistry, physics, materials, nanomaterials and nanodevices. Meixiang Wan is a professor at the Institute of Chemistry, Chinese Academy of Sciences, Beijing.

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

A fully comprehensive examination of state-of-the-art technologies for measurement at the small scale • Highlights the advanced research work from industry and academia in micro-nano devices test technology • Written at both introductory and advanced levels, provides the fundamentals and theories • Focuses on the measurement techniques for characterizing MEMS/NEMS devices

This volume contains the proceedings of the conference on "Atomic and Nanometer Scale Modification of Materials: Fundamentals and Applications" which was co-sponsored by NATO and the Engineering Foundation, and took place in Ventura, California in August 1992. The goal of the organizers was to bring together and facilitate the exchange of information and ideas between researchers involved in the development of techniques for nanometer-scale modification and manipulation. theorists investigating the fundamental mech anisms of the processes involved in modification, and scientists studying the properties and applications of nanostructures. About seventy scientists from all over the world participated in the conference. It has been more than 30 years since Richard Feynman wrote his prophetic article: ''There is Plenty of Room at the Bottom" (Science and Engineering, 23, 22, 1960). In it he predicted that some day we should be able to store bits of information in structures composed of only 100 atoms or so, and thus be able to write all the information accumulated in all the books in the world in a cube of material one two-hundredths of an inch high. He went on to say, "the prin ciples of physics, as far as I can see, do not speak against the possibility of maneuvering things atom by atom. " Since that time there has been significant progress towards the realization of Feynman's dreams.

Nanotechnology has received tremendous interest over the last decade, not only from the scientific community but also from a business perspective and from the general public. Although nanotechnology is still at the largely unexplored frontier of science, it has the potential for extremely exciting technological innovations that will have an enormous impact on areas as diverse as information technology, medicine, energy supply and probably many others. The miniturization of devices and structures will impact the speed of devices and information storage capacity. More importantly, though, nanotechnology should lead to completely new functional devices as nanostructures have fundamentally different physical properties that are governed by quantum effects. When nanometer sized features are fabricated in materials that are currently used in electronic, magnetic, and optical applications, quantum behavior will lead to a set of unprecedented properties. The interactions of nanostructures with biological materials are largely unexplored. Future work in this direction should yield enabling technologies that allows the study and direct manipulation of biological processes at the (sub) cellular level.

Nanotechnology has experienced a rapid growth in the past decade, largely owing to the rapid advances in nanofabrication techniques employed to fabricate nano-devices. Nanofabrication can be divided into two categories: "bottom up" approach using chemical synthesis or self assembly, and "top down" approach using nanolithography, thin film deposition and etching techniques. Both topics are covered, though with a focus on the second category. This book contains twenty nine chapters and aims to provide the fundamentals and recent advances of nanofabrication techniques, as well as its device applications. Most chapters focus on in-depth studies of a particular research field, and are thus targeted for researchers, though some chapters focus on the basics of lithographic techniques accessible for upper year undergraduate students. Divided into five parts, this book covers electron beam, focused ion beam, nanoimprint, deep and extreme UV, X-ray, scanning probe, interference, two-photon, and nanosphere lithography.