The current edited book presents some of the most advanced research findings in the field of nanotechnology and its application in materials development in a very concise form. The main focus of the book is dragged toward those materials where electronic properties are manipulated for development of advanced materials. We have discussed about the extensive usage of nanotechnology and its impact on various facets of the chip-making practice from materials to devices such as basic memory, quantum dots, nanotubes, nanowires, graphene-like 2D materials, and CIGS thin-film solar cells as energy-harvesting devices. Researchers as well as students can gain valuable insights into the different processing of nanomaterials, characterization procedures of the materials in nanoscale, and their different functional properties and applications.

Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena. Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology’s Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and development. The book also showcases some key application areas of micro-electro-mechanical-systems (MEMS) that have reached the commercial realm. Capitalizing on Dr. Kaul’s considerable technical experience with micro- and nanotechnologies and her extensive research in prestigious academic and industrial labs, the book offers a fresh perspective on application-driven research in micro- and nanoelectronics, including MEMS. Chapters explore how rapid developments in this area are transitioning from the lab to the market, where new and exciting materials, devices, and manufacturing technologies are revolutionizing the electronics industry. Although many micro- and nanotechnologies still face major scientific and technological challenges and remain within the realm of academic research labs, rapid advances in this area have led to the recent emergence of new applications and markets. This handbook encapsulates that exciting recent progress by providing high-quality content contributed by international experts from academia, leading industrial institutions—such as Hewlett-Packard—and government laboratories including the U.S. Department of Energy’s Sandia National Laboratory. Offering something for everyone, from students to scientists to entrepreneurs, this book showcases the broad spectrum of cutting-edge technologies that show significant promise for electronics and related applications in which nanotechnology plays a key role.

Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.

While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.

Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.

Nanoelectronics and Photonics provides a fundamental description of the core elements and problems of advanced and future information technology. The authoritative book collects a series of tutorial chapters from leaders in the field covering fundamental topics from materials to devices and system architecture, and bridges the fundamental laws of physics and chemistry of materials at the atomic scale with device and circuit design and performance requirements.