The work covers a multimodal microscope technology for the analysis, manipulation and transfer of materials and objects in the submicrometer range. An atomic force microscope (AFM) allows imaging of the surface topography and a Scanning Microwave Microscope (SMM) detects electromagnetic properties, both operating in a Scanning Electron Microscope (SEM). The described technology demonstrator allows to observe the region-of-interest live with the SEM, while at the same time a characterization with interacting evanescent near-field microwaves and intermolecular forces takes place. engl.

Making a clear distinction is made between nano- and micro-mechanical testing for physical reasons, this monograph describes the basics and applications of the supermicroscopies AFM and SNOM, and of the nanomechanical testing on rough and technical natural surfaces in the submicron range down to a lateral resolution of a few nm. New or improved instrumentation, new physical laws and unforeseen new applications in all branches of natural sciences (around physics, chemistry, mineralogy, materials science, biology and medicine) and nanotechnology are covered as well as the sources for pitfalls and errors. It outlines the handling of natural and technical samples in relation to those of flat standard samples and emphasizes new special features. Pitfalls and sources of errors are clearly demonstrated as well as their efficient remedy when going from molecularly flat to rough surfaces. The academic or industrial scientist learns how to apply the principles for tackling their scientific or manufacturing tasks that include roughness far away from standard samples.

This book highlights what is now achievable in terms of materials characterization with the new generation of cold-field emission scanning electron microscopes applied to real materials at high spatial resolution. It discusses advanced scanning electron microscopes/scanning- transmission electron microscopes (SEM/STEM), simulation and post-processing techniques at high spatial resolution in the fields of nanomaterials, metallurgy, geology, and more. These microscopes now offer improved performance at very low landing voltage and high -beam probe current stability, combined with a routine transmission mode capability that can compete with the (scanning-) transmission electron microscopes (STEM/-TEM) historically run at higher beam accelerating voltage

This book presents scanning electron microscopy (SEM) fundamentals and applications for nanotechnology. It includes integrated fabrication techniques using the SEM, such as e-beam and FIB, and it covers in-situ nanomanipulation of materials. The book is written by international experts from the top nano-research groups that specialize in nanomaterials characterization. The book will appeal to nanomaterials researchers, and to SEM development specialists.

This thesis presents the design, fabrication and experimental validation of an integrated dual-mode scanning microwave microscopy (SMM)/Atomic Force Microscopy (AFM) system that does not require the use of a conventional laser-based AFM or external scanners. Microfabricated SMM probes are collocated with strain-based piezoresistive AFM probes in a CMOS-MEMS process, and are actuated by integrated electrothermal scanners. Integration of AFM enables dual-mode imaging (topography and electrical properties); it also enables control over tip-sample distance, which is crucial for accurate SMM imaging. The SMM (also known as Scanning Near-field Microwave Microscope and Scanning Evanescent Microwave Microscope) is the most well-known type of Scanning Probe Microscopes (SPM) that can quantify local dielectric and conductivity of materials. It has emerged as the most promising means for the fast, non-contact, and non-destructive study of materials and semiconductor devices. The CMOS-MEMS SMM devices are fabricated by using a standard foundry CMOS process, followed by an in-house mask-less post-processing technique to release them. Single-chip SMM/AFM devices with integrated 1-D and 3-D actuation are introduced. The CMOS-MEMS fabrication process allows external bulky scanners to be replaced with integrated MEMS actuators that are small and immune to vibration and drift. In this work, electrothermal MEMS actuators are utilized to scan the tip over the sample in 3 degrees of freedom, over a 13 [mu]m x 13 [mu]m x 10 [mu]m scan range in the x, y, and z directions, respectively. Furthermore, the availability of polysilicon layers on the CMOS processes allows for on-chip integrated piezoresistive position sensing that obviates the need for the laser system. Vertical tip-sample distance control of a few nanometers is achieved with the integrated piezoresistive position sensors. These devices are used to modulate the tip-sample separation to underlying samples with a periodic signal, improving immunity to long-term system drifts. To improve the sensitivity of the CMOS-MEMS SMM, different types of matching networks for SMMs are thoroughly analyzed and closed form formulas are presented for each type. Based on the analyses, the stub matching method is selected to match the high tip-to-sample impedance to the 50 ohm characteristic impedance of the system. After that, with the help of lumped models and EM simulations, different sections of the CMOS-MEMS SMM system are analyzed and suggestions for selecting the best micro-transmission line and bonding-pad transmission lines are given. A measurement circuit for SMM is then presented and explained, showing how this measurement system can improve the output-signal-to-noise ratio and hence the sensitivity of microwave imaging. Calculations for the entire SMM system indicate that sub-attofarad tip-sample impedance can be measured. It is noteworthy that most of the analyses and suggestions given in this thesis can be applied to any Scanning Microwave Microscopes or, even more generally, to any microwave system that needs to sense a small signal. Finally, the measurement results for the fabricated CMOS-MEMS SMM are presented to verify the proposed methods. Several samples with sub-micron and nanometer feature sizes are imaged. A special test sample with no topography but with buried dielectric materials in grid and stripes is also designed and measured.

This book presents a coherent synopsis of a rapidly evolving field. Subjects covered include diffraction contrast and defect analysis by conventional TEM lattice imaging, phase contrast and resolution limits in high resolution electron microscopy. Specialised electron diffraction techniques are also covered, as is the application of parallel electron energy loss spectroscopy and scanning transmission EM for subnanometer analysis. Materials analyzed include thin films, interfaces and non-conventional materials. WDS and EDS are treated, with an emphasis on phi(rhoZeta) techniques for the analysis of thin layers and surface films. Theoretical and practical aspects of ESEM are discussed in relation to applications in crystal growth, biomaterials and polymers. Recent developments in SPM are also described. A comprehensive survey of the state of the art in electron and SPM, future research directions and prospective applications in materials engineering.