This Open Access book gives a comprehensive account of both the history and current achievements of molecular beam research. In 1919, Otto Stern launched the revolutionary molecular beam technique. This technique made it possible to send atoms and molecules with well-defined momentum through vacuum and to measure with high accuracy the deflections they underwent when acted upon by transversal forces. These measurements revealed unforeseen quantum properties of nuclei, atoms, and molecules that became the basis for our current understanding of quantum matter. This volume shows that many key areas of modern physics and chemistry owe their beginnings to the seminal molecular beam work of Otto Stern and his school. Written by internationally recognized experts, the contributions in this volume will help experienced researchers and incoming graduate students alike to keep abreast of current developments in molecular beam research as well as to appreciate the history and evolution of this powerful method and the knowledge it reveals.

Introduction to Molecular Beams Gas Dynamics is devoted to the theory and phenomenology of supersonic molecular beams. The book describes the main physical idea and mathematical methods of the gas dynamics of molecular beams, while the detailed derivation of results and equations is accompanied by an explanation of their physical meaning. Many of the applications of supersonic molecular beams are discussed, including their application to molecular spectroscopy, and the study of surface phonons by monoatomic and monokinetic beams, and the study of intermolecular potentials and the onset of condensation. The phenomenology of supersonic beams can appear complex to those not experienced in supersonic gas dynamics and, as a result, the few existing reviews on the topic generally assume a limited level of knowledge. The book begins with a quantitative description of the fundamental laws of gas dynamics and goes on to explain such phenomena. It analyzes the evolution of the gas jet from the continuum to the regime of almost free collisions between molecules, and includes numerous figures, illustrations, tables and references.

First published in 1956, this classic work by N.F. Ramsey, 1989 Nobel Laureate in Physics, provides an account of atomic and molecular structure. After an introductory section reviewing experimental apparatus and the kinds of quantities that can be measured, Ramsey provides comprehensive accounts of gas kinetics, chemical equilibria, and atomic and nuclear magnetic moments by nonresonance methods. He also provides tables of nuclear moments, as well as detailed accounts of nuclear and molecular interactions. Finally there are sections on atomic fine and hyperfine structure, and the design of experimental apparatus. The focus throughout is on the physics of beams composed of electrically neutral particles. As a seminal work by one of the world's leading scientists, this volume will interest students and researchers in a range of fields, including atomic physics, physical chemistry, spectroscopy, and biological chemistry.

This title covers the state of the art in this field both theoretically and experimentally. With contributions from leading researchers including several Nobel laureates, it represents a long-lasting source of reference on all aspects of fundamental research into or using atomic and molecular beams.

Atomic and molecular beams are employed in physics and chemistry experiments and, to a lesser extent, in the biological sciences. These beams enable atoms to be studied under collision-free conditions and allow the study of their interaction with other atoms, charged particles, radiation, and surfaces. Atomic and Molecular Beams: Production and Col

This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.

The Advances in Chemical Physics series provides the chemical physics and physical chemistry fields with a forum for critical, authoritative evaluations of advances in every area of the discipline. Filled with cutting-edge research reported in a cohesive manner not found elsewhere in the literature, each volume of the Advances in Chemical Physics series serves as the perfect supplement to any advanced graduate class devoted to the study of chemical physics.