One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

The contributions in this volume reflect not only the growing understanding of the underlying mechanisms controlling the various reactions in laser surface processing, but also the potential of several developing applications of direct processing. The most notable trend in the field currently is the technique of laser ablation, which is reported in almost a quarter of the papers in this volume. Whilst by no means a new phenomenon, attention has until recent years remained in the area of lithography and UV-sensitive materials. The growth in interest lies in the use of the technique to grow multi-component thin films and multi-layers. A number of papers on the topic of process diagnostics and in-situ measurements are also included. The theme of these annual meetings is centred around the physical and chemical modification of thin films and surfaces induced by the action of photon, ion, neutral, or electron beams in a variety of environments. Consequently these proceedings provide a comprehensive and unified presentation of the latest developments in this field.