Containing updated material from the first edition, this book adds several chapters covering RF testing techniques, reliability, process and manufacturing disciplines and process development (experiment by design).

This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Supplies readers with the basic knowledge and guidance for the application of new lasers and light-emitting devices. The first part of the book discusses the generation of sub-shot-noise light in macroscopic pn junction light emitting devices, the second part is on the application of squeezed light in high-precision measurement, the third part concerns the Coulomb blockade effect in a mesoscopic pn junction and generation of single photon states, and the last part is on the detection of single photons using a visible light photon counter.

Although the theory and principles of optical waveguides have been established for more than a century, the technologies have only been realized in recent decades. Optical Waveguides: From Theory to Applied Technologies combines the most relevant aspects of waveguide theory with the study of current detailed waveguiding technologies, in particular, photonic devices, telecommunication applications, and biomedical optics. With self-contained chapters written by well-known specialists, the book features both fundamentals and applications. The first three chapters examine the theoretical foundations and bases of planar optical waveguides as well as critical optical properties such as birefringence and nonlinear optical phenomena. The next several chapters focus on contemporary waveguiding technologies that include photonic devices and telecommunications. The book concludes with discussions on additional technological applications, including biomedical optical waveguides and the potential of neutron waveguides. As optical waveguides play an increasing part in modern technology, photonics will become to the 21st century what electronics were to the 20th century. Offering both novel insights for experienced professionals and introductory material for novices, this book facilitates a better understanding of the new information era—the photonics century.

The development of electronics that can operate at high temperatures has been identified as a critical technology for the next century. Increasingly, engineers will be called upon to design avionics, automotive, and geophysical electronic systems requiring components and packaging reliable to 200 °C and beyond. Until now, however, they have had no single resource on high temperature electronics to assist them. Such a resource is critically needed, since the design and manufacture of electronic components have now made it possible to design electronic systems that will operate reliably above the traditional temperature limit of 125 °C. However, successful system development efforts hinge on a firm understanding of the fundamentals of semiconductor physics and device processing, materials selection, package design, and thermal management, together with a knowledge of the intended application environments. High Temperature Electronics brings together this essential information and presents it for the first time in a unified way. Packaging and device engineers and technologists will find this book required reading for its coverage of the techniques and tradeoffs involved in materials selection, design, and thermal management and for its presentation of best design practices using actual fielded systems as examples. In addition, professors and students will find this book suitable for graduate-level courses because of its detailed level of explanation and its coverage of fundamental scientific concepts. Experts from the field of high temperature electronics have contributed to nine chapters covering topics ranging from semiconductor device selection to testing and final assembly.

GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing