Modeling and Simulation of the Fully Depleted Silicon-on-insulator Mosfet for Submicron Cmos Ic Design

Modeling and Simulation of the Fully Depleted Silicon-on-insulator Mosfet for Submicron Cmos Ic Design
Title Modeling and Simulation of the Fully Depleted Silicon-on-insulator Mosfet for Submicron Cmos Ic Design PDF eBook
Author Jin Young Choi
Publisher
Pages 177
Release 1991
Genre
ISBN

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CMOS VLSI Engineering

CMOS VLSI Engineering
Title CMOS VLSI Engineering PDF eBook
Author James B. Kuo
Publisher Springer Science & Business Media
Pages 816
Release 1998-09-30
Genre Computers
ISBN 9780792382720

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Silicon-On-Insulator (SOI) CMOS technology has been regarded as another major technology for VLSI in addition to bulk CMOS technology. Owing to the buried oxide structure, SOI technology offers superior CMOS devices with higher speed, high density, and reduced second order effects for deep-submicron low-voltage, low-power VLSI circuits applications. In addition to VLSI applications, and because of its outstanding properties, SOI technology has been used to realize communication circuits, microwave devices, BICMOS devices, and even fiber optics applications. CMOS VLSI Engineering: Silicon-On-Insulator addresses three key factors in engineering SOI CMOS VLSI - processing technology, device modelling, and circuit designs are all covered with their mutual interactions. Starting from the SOI CMOS processing technology and the SOI CMOS digital and analog circuits, behaviors of the SOI CMOS devices are presented, followed by a CAD program, ST-SPICE, which incorporates models for deep-submicron fully-depleted mesa-isolated SOI CMOS devices and special purpose SOI devices including polysilicon TFTs. CMOS VLSI Engineering: Silicon-On-Insulator is written for undergraduate senior students and first-year graduate students interested in CMOS VLSI. It will also be suitable for electrical engineering professionals interested in microelectronics.

Transistor Level Modeling for Analog/RF IC Design

Transistor Level Modeling for Analog/RF IC Design
Title Transistor Level Modeling for Analog/RF IC Design PDF eBook
Author Wladyslaw Grabinski
Publisher Springer Science & Business Media
Pages 298
Release 2006-07-01
Genre Technology & Engineering
ISBN 1402045565

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The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

Modeling and Design of Deep-submicron Fully Depleted Silicon-on- Insulator Complementary Metal-oxide-semiconductor for Low-voltage Integrated Circuit Applications

Modeling and Design of Deep-submicron Fully Depleted Silicon-on- Insulator Complementary Metal-oxide-semiconductor for Low-voltage Integrated Circuit Applications
Title Modeling and Design of Deep-submicron Fully Depleted Silicon-on- Insulator Complementary Metal-oxide-semiconductor for Low-voltage Integrated Circuit Applications PDF eBook
Author Ping Chin Yeh
Publisher
Pages 334
Release 1996
Genre
ISBN

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Dissertation Abstracts International

Dissertation Abstracts International
Title Dissertation Abstracts International PDF eBook
Author
Publisher
Pages 846
Release 2000
Genre Dissertations, Academic
ISBN

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A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design

A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design
Title A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design PDF eBook
Author Douglas Weiser
Publisher
Pages 210
Release 2019-05-31
Genre Technology & Engineering
ISBN 9780530007960

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Abstract: A process-based model (UFET) for deep-submicron bulk-silicon MOSFETs is developed and verified with numerical device simulations and measured data. The charge-based model is physical with accountings for the predominant short-channel (e.g., charge sharing, drain-induced threshold reduction and velocity saturation) and extremely scaled-technology (i.e., energy quantization and polysilicon-gate depletion) effects in MOSFETs. The key to UFET is the characterization of the bias-dependent two-dimensional regions near the source/ drain junctions which can extend over a significant fraction of the metallurgical channel length. When these two-dimensional regions near the junctions are modeled, the physical charge-sheet model can be applied to the remaining "quasi-two- dimensional" channel length to define the channel current and terminal charges, without resorting to empiricism to account for the short-channel effects. Special attention paid to continuity in the derivation of the model formalism yields a physical C-infinity model applicable to analog and digital CMOS circuit design. The small number of physical, process-based parameters simplifies the model calibration, and renders the model suitable for predictive device/circuit simulation, statistical simulations and circuit sensitivity analyses based on known or presumed process variations. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design" by Douglas Aaron Weiser, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.

Charge-Based MOS Transistor Modeling

Charge-Based MOS Transistor Modeling
Title Charge-Based MOS Transistor Modeling PDF eBook
Author Christian C. Enz
Publisher John Wiley & Sons
Pages 328
Release 2006-08-14
Genre Technology & Engineering
ISBN 0470855452

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Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.