At the 90-nm node, silicon technologies have reached a point where the transistor fT and f MAX simultaneously exceed 150 GHz, with a 1.2 V supply. With low fabrication costs for high volumes of circuits, RF-CMOS technologies are ideally suited to realize exciting new high bandwidth consumer products that operate in the mm-wave regime. Before this can happen, models of both active and passive devices will require a high degree of accuracy from DC, all the way up to mm-wave frequencies. This thesis presents new techniques that help leverage the power of measurements to characterize and model devices of nano-CMOS technologies well into the mm-wave regime. In particular, two new de-embedding techniques are devised in order to improve measurement accuracy, and reduce wafer area consumption. Moreover, the measured characteristics of various microstrip lines, varactors, and n-MOSFETs fabricated in a 90-nm RF-CMOS technology are analyzed in order to identify optimal geometries for high frequency design. An extraction methodology for a scalable physical model of accumulation-mode MOS varactors is also included.

The increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: Specifics of S-parameter measurements of planar structures Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.

This book addresses in-depth technical issues, limitations, considerations and challenges facing millimeter-wave (MMW) integrated circuit and system designers in designing MMW wireless communication systems from the complementary metal-oxide semiconductor (CMOS) perspective. It offers both a comprehensive explanation of fundamental theories and a broad coverage of MMW integrated circuits and systems.CMOS Millimeter-Wave Integrated Circuits for Next Generation Wireless Communication Systems is an excellent reference for faculty, researchers and students working in electrical and electronic engineering, wireless communication, integrated circuit design and circuits and systems. While primarily written for upper-level undergraduate courses, it is also an excellent introduction to the subject for instructors, graduate students, researchers, integrated circuit designers and practicing engineers. Advanced readers could also benefit from this book as it includes many recent state-of-the-art MMW circuits.

Design and Modeling of Millimeter-wave CMOS Circuits for Wireless Transceivers describes in detail some of the interesting developments in CMOS millimetre-wave circuit design. This includes the re-emergence of the slow-wave technique used on passive devices, the license-free 60GHz band circuit blocks and a 76GHz voltage-controlled oscillator suitable for vehicular radar applications. All circuit solutions described are suitable for digital CMOS technology. Digital CMOS technology developments driven by Moore’s law make it an inevitable solution for low cost and high volume products in the marketplace. Explosion of the consumer wireless applications further makes this subject a hot topic of the day. The book begins with a brief history of millimetre-wave research and how the silicon transistor is born. Originally meant for different purposes, the two technologies converged and found its way into advanced chip designs. The second part of the book describes the most important passive devices used in millimetre-wave CMOS circuits. Part three uses these passive devices and builds circuit blocks for the wireless transceiver. The book completes with a comprehensive list of references for further readings. Design and Modeling of Millimeter-wave CMOS Circuits for Wireless Transceivers is useful to show the analogue IC designer the issues involved in making the leap to millimetre-wave circuit designs. The graduate student and researcher can also use it as a starting point to understand the subject or proceed to innovative from the works described herein.

Along with numerous opportunities, emerging mm-wave/THz applications face new challenges and require new devices and topologies. This reference provides alternative and novel solutions by CMOS on-chip metamaterials. Unlike conventional metamaterial devices on PCB, the presented CMOS on-chip metamaterial can be deployed in many mm-wave and THz circuit and systems. It provides detailed information from device to system, along with adequate real circuit examples and demonstrations. The authors bring together their expertise and experience on CMOS on-chip metamaterial to provide latest research progress for this emerging topic.