A thorough reference work bridging the gap between contemporary and traditional approaches to noise problems Noise in semiconductor devices refers to any unwanted signal or disturbance in the device that degrades performance. In semiconductor devices, noise is attributed to hot-electron effects. Current advances in information technology have led to the development of ultrafast devices that are required to provide low-noise, high-speed performance. Microwave Noise in Semiconductor Devices considers available data on the speed versus noise trade-off and discusses optimal solutions in semiconductors and semiconductor structures. These solutions are of direct interest in the research and development for fast, efficient, and reliable communications systems. As the only book of its kind accessible to practicing engineers, the material is divided into four parts-the kinetic theory of fluctuations and its corollaries, the methods of measurements of microwave noise, low-dimensional structures, and, finally, devices. With over 100 illustrations presenting recent experimental data for up-to-date semiconductor structures designed for ultrafast electronics, together with results of microscopic simulation where available, these examples, tables, and references offer a full comprehension of electronic processes and fluctuation in dimensionally quantizing structures. Bridging the apparent gap between the microscopic approach and the equivalent circuit approach, Microwave Noise in Semiconductor Devices considers microwave fluctuation phenomena and noise in terms of ultrafast kinetic processes specific to modern quantum-well structures. Scientists in materials science, semiconductor and solid-state physics, electronic engineers, and graduate students will all appreciate this indispensable review of contemporary and future microwave and high-speed electronics.

Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.

We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.

A GUIDE TO NOISE IN MICROWAVE CIRCUITS A fulsome exploration of critical considerations in microwave circuit noise In A Guide to Noise in Microwave Circuits: Devices, Circuits, and Measurement, a team of distinguished researchers deliver a comprehensive introduction to noise in microwave circuits, with a strong focus on noise characterization of devices and circuits. The book describes fluctuations beginning with their physical origin and touches on the general description of noise in linear and non-linear circuits. Several chapters are devoted to the description of noise measurement ­techniques and the interpretation of measured data. A full chapter is dedicated to noise sources as well, including thermal, shot, plasma, and current. A Guide to Noise in Microwave Circuits offers examples of measurement problems—like low noise block (LNB) of satellite television – and explores equipment and measurement methods, like the Y, cold source, and 7-state method. This book also includes: A thorough introduction to foundational terms in microwave circuit noise, including average values, amplitude distribution, autocorrelation, cross-correlation, and noise spectra Comprehensive explorations of common noise sources, including thermal noise, the Nyquist formula and thermal radiation, shot noise, plasma noise, and more Practical discussions of noise and linear networks, including narrowband noise In-depth examinations of calculation methods for noise quantities, including noise voltages, currents, and spectra, the noise correlation matrix, and the noise of simple passive networks Perfect for graduate students specializing in microwave and wireless electronics, A Guide to Noise in Microwave Circuits: Devices, Circuits, and Measurement will also earn a place in the libraries of professional engineers working in microwave or wireless circuits and system design.

Eine Einführung in das Gebiet der optoelektronischen pn-Halbleiterbauelemente aus den Blickwinkeln der Materialeigenschaften, der Funktionsprinzipien, der Herstellung und Verpackung, der Zuverlässigkeit und der Anwendung. Das Buch ist für Anfänger gedacht, daher sind die Erläuterungen in geeigneter Weise vereinfacht und theoretische Grundlagen wurden zugunsten anwendungsspezifischer Aspekte zum Teil übersprungen. (12/98)

This book deals with microwave electronics, that is to say those components of microwave circuits that generate, amplify, detect or modulate signals. It is based on a course given in the Electrical Engineering Department of Eindhoven University since 1985 and on about twenty years of experience in the microwave field. Somewhat to my surprise I found that there were hardly any textbooks that addressed the specific properties and demands of microwave devices, including vacuum devices and their interactions with circuits. Numerous books exist on semiconductor electronic devices, dealing in an excellent way with the basic device physics, but being somewhat brief on typical micro wave aspects. On the other hand there are also many books that concentrate on electromagnetic theory and passive circuits, treating devices without reference to the underlying physics. In between there are some entirely devoted to a particular device, for example, the GaAs MESFET. With regard to tubes the situation is even worse: books that treat the basic principles are usually quite old and modern books often concentrate on specific devices, like high power tubes. So it seems that there is room for a book like this one. Its aim is to provide an elementary understanding ofmicrowave electronic devices, both vacuum and semiconductor, on the one hand in relation to the basic physics underlying their operation and on the other in relation to their circuit applications.

The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.