This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor’s linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends Written by experts in the field, all of whom are leading researchers in the area Each chapter describes theoretical background and gives experimental results and practical applications Includes forewords by Giovanni Ghione and Stephen Maas

The first chapter is intended primarily for those readers who are new to the de-embedding concept. To serve as a gateway into this fascinating but also challenging field of knowledge, the present chapter will show how to extract the full potential of the microwave de-embedding concept, from the theoretical background to practical applications. As a broad definition, de-embedding can be regarded as the mathematical process by which electrical reference planes can be set to desired locations. Its importance originates from the fact that electrical characteristics are not always directly measurable at the reference planes of interest. Hence, moving the electrical reference planes mathematically enables one to discover precious information. With the aim to provide an introductory and comprehensive overview of the de-embedding concept, this chapter discusses its effectiveness for different purposes: measurements, modeling, and design. Experimental results will be analyzed to act as a valuable support for gaining a clear-cut understanding.

This new authoritative resource presents the basics of network analyzer measurement equipment and troubleshooting errors involved in the on-wafer microwave measurement process. This book bridges the gap between theoretical and practical information using real-world practices that address all aspects of on-wafer passive device characterization in the microwave frequency range up to 60GHz. Readers find data and measurements from silicon integrated passive devices fabricated and tested in advance CMOS technologies. Basic circuit equations, terms and fundamentals of time and frequency domain analysis are covered. This book also explores the basics of vector network analyzers (VNA), two port S-parameter measurement routines, signal flow graphs, network theory, error models and VNA calibrations with the use of calibration standards.

An overview of topics is presented related to noise characterization and modeling of linear, active devices for microwave applications, as well as to advanced methodologies for low-noise design. A complete description of the most common noise measurement techniques, namely the Y-factor method and the cold source method, are provided, with particular attention being paid to practical aspects such as de-embedding the measurement at the device under test reference planes, possible sources of error, and uncertainty estimation. Noise modeling is approached from a well-established standpoint, based on the extraction of a small-signal equivalent circuit model; but also source pull-based techniques—both standard and advanced ones—are broadly illustrated. Finally, a comprehensive discussion on design of single- and multistage low-noise amplifiers is proposed, ranging from the most classical tools and methodologies, such as constant-gain and constant-noise circles, to novel graphical tools and more advanced concepts, such as global mismatch limits and noise measure.

The chapter deals with two recently proposed characterization techniques of microwave transistors oriented to high-frequency power amplifier (PA) design. In particular, the nonlinear embedding and de-embedding design techniques are detailed, along with evidence of their advantages with respect to conventional design approaches in terms of power and frequency handling capability. The discussion also details the differences between the two techniques; despite the fact that they share the same theoretical basis, the techniques suffer from different critical facets. Finally, with the aim of guiding the reader towards full comprehension of the topic, different experimental examples are provided for transistor characterization and PA design.

This work presents an overview of the various facets of microwave device behavioral modeling technology, from the mathematical formulation to the required laboratory parameter extraction, focusing its attention on one of the less covered aspects: the embedding and de-embedding procedures associated with the behavioral model extraction process. The discussion starts with the revision of some of the most important behavioral modeling tools, explaining the three most important types of behavioral model formats (polynomial, artificial neural networks, and table-based models) and their instantiation in the context of microwave transistors. Then, it will evolve to the behavioral model parameter extraction procedures, reviewing the required specific microwave instrumentation and correspondent calibration and de-embedding of measurement data. Finally, this chapter will illustrate the use of embedding and de-embedding procedures in the behavioral modeling context, giving a particular emphasis on the needed behavioral model inversion techniques.

Just as physical microwave measurements must be de-embedded from test fixtures by means of calibration, electromagnetic analysis must likewise be calibrated so the results may be de-embedded. This chapter investigates the nature of the electromagnetic analysis port discontinuity, how it is characterized by calibration, and how it is removed (including a possible reference plane shift) by de-embedding. Both double-delay and short-open calibration are described. The theory for single port calibration and de-embedding is presented in a manner that is easily extended to treat multiple coupled ports. Additional theory shows how to extend calibration to groups of internal ports, critical, for example, in analyzing the passive planar portion of an amplifier (both the input and output matching networks in the same analysis) and having internal calibrated ports for connecting the transistor. Evaluation of error (accuracy) is covered in detail. Techniques that take advantage of calibrated ports, including circuit subdivision and port tuning, are described.