Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.

Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.

Mesoscopic physics refers to the physics of structures larger than a nanometer (one billionth of a meter) but smaller than a micrometer (one millionth of a meter). This size range is the stage on which the exciting new research on submicroscopic and electronic and mechanical devices is being done. This research often crosses the boundary between physics and engineering, since engineering such tiny electronic components requires a firm grasp of quantum physics. Applications for the future may include such wonders as microscopic robot surgeons that travel through the blood stream to repair clogged arteries, submicroscopic actuators and builders, and supercomputers that fit on the head of a pin. The world of the future is being planned and built by physicists, engineers, and chemists working in the microscopic realm. This book can be used as the main text in a course on mesoscopic physics or as a supplementary text in electronic devices, semiconductor devices, and condensed matter physics courses. For this new edition, the author has substantially updated and modified the material especially of chapters 3: Dephasing, 8: Noise in mesoscopic systems, and the concluding chapter 9.

This text treats electronic transport in the regime where conventional textbook models are no longer applicable, including the effect of electronic phase coherence, energy quantization and single-electron charging. This second edition is completely updated and expanded, and now comprises new chapters on spin electronics and quantum information processing, transport in inhomogeneous magnetic fields, organic/molecular electronics, and applications of field effect transistors. The book also provides an overview of semiconductor processing technologies and experimental techniques. With a number of examples and problems with solutions, this is an ideal introduction for students and beginning researchers in the field. "This book is a useful tool, too, for the experienced researcher to get a summary of recent developments in solid state nanostructures. I applaud the author for a marvellous contribution to the scientific community of mesoscopic electronics." Prof. K. Ensslin, Solid State Physics Laboratory, ETH Zurich

Ongoing developments in nanofabrication technology and the availability of novel materials have led to the emergence and evolution of new topics for mesoscopic research, including scanning-tunnelling microscopic studies of few-atom metallic clusters, discrete energy level spectroscopy, the prediction of Kondo-type physics in the transport properties of quantum dots, time dependent effects, and the properties of interacting systems, e.g. of Luttinger liquids. The overall understanding of each of these areas is still incomplete; nevertheless, with the foundations laid by studies in the more traditional systems there is no doubt that these new areas will advance mesoscopic electron transport to a new phenomenological level, both experimentally and theoretically. Mesoscopic Electron Transport highlights selected areas in the field, provides a comprehensive review of such systems, and also serves as an introduction to the new and developing areas of mesoscopic electron transport.

Annotation David K. Ferry introduces the physics and applications of transport in mesoscopic and nanoscale electronic systems and devices and expands on the behaviour of these novel devices the numerous effects not seen in bulk semiconductors. Including coverage of recent developments, and with a chapter on carbon-based nanoelectronics, this work will provide a good course text for advanced students or as a handy reference for researchers or those entering this interdisciplinary area.