Traces the long and successful career of the award-winning country music group, from their early years in the late 1950s until their retirement in 2000.

"The Music of The Statler Brothers: An Anthology is an in-depth look at the musical career of The Statler Brothers' forty-year reign as country music's premier group. Lead singer, Don Reid, writes about each song ever recorded by the Grammy Award-winning foursome and gives backstage insight to the writings and the selections of each composition. A songwriter with two-hundred-fifty recordings of music by his own hand and a member of both the Country Music and Gospel Music Halls of Fame, Reid gives meaningful and often humorous insight into the day-to-day workings and trials of the music industry. There has been no other book by someone in the recording business that compares with this song-by-song chronicle. Unique in its content and style, this anthology offers anyone with an interest in the entertainment business more than a glimpse behind the curtain. Covering forty-five albums of original music, this is a must-read for all Statler Brothers fans and lovers of country and gospel music alike"--

Testing Static Random Access Memories covers testing of one of the important semiconductor memories types; it addresses testing of static random access memories (SRAMs), both single-port and multi-port. It contributes to the technical acknowledge needed by those involved in memory testing, engineers and researchers. The book begins with outlining the most popular SRAMs architectures. Then, the description of realistic fault models, based on defect injection and SPICE simulation, are introduced. Thereafter, high quality and low cost test patterns, as well as test strategies for single-port, two-port and any p-port SRAMs are presented, together with some preliminary test results showing the importance of the new tests in reducing DPM level. The impact of the port restrictions (e.g., read-only ports) on the fault models, tests, and test strategies is also discussed. Features: -Fault primitive based analysis of memory faults, -A complete framework of and classification memory faults, -A systematic way to develop optimal and high quality memory test algorithms, -A systematic way to develop test patterns for any multi-port SRAM, -Challenges and trends in embedded memory testing.

THE INTERNATIONAL BESTSELLER 'Truly fascinating.' Steve Wright, BBC Radio 2 - Have you ever forgotten the name of someone you’ve met dozens of times? - Or discovered that your memory of an important event was completely different from everyone else’s? - Or vividly recalled being in a particular place at a particular time, only to discover later that you couldn’t possibly have been? We rely on our memories every day of our lives. They make us who we are. And yet the truth is, they are far from being the accurate record of the past we like to think they are. In The Memory Illusion, forensic psychologist and memory expert Dr Julia Shaw draws on the latest research to show why our memories so often play tricks on us – and how, if we understand their fallibility, we can actually improve their accuracy. The result is an exploration of our minds that both fascinating and unnerving, and that will make you question how much you can ever truly know about yourself. Think you have a good memory? Think again. 'A spryly paced, fun, sometimes frightening exploration of how we remember – and why everyone remembers things that never truly happened.' Pacific Standard

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

Examines the ways that embracing socially awkward situations, even when they lead to embarrassment and self-conciousness, also provide the opportunity to test oneself and to recognize how people are connected to each other.