This thesis work features the exploration of the capabilities and limitations of devices based on MBE (Molecular Beam Epitaxy) grown IIInitride materials under three principal applications: photovoltaics, high electron mobility transistors (HEMTs), and terahertz emitters. InGaN solar cells covering the deep UV to the red ranges of the solar spectrum were fabricated. The increase in indium composition in the alloys to absorb longer wavelengths resulted in considerable leakage and series resistance caused by a combination of surface electron accumulation and electrically active line defects. A combination of thermal annealing, improved ohmic contact metal selection, electrochemical anodization, and grain coarsening resulted in improved performance. Higher sheet densities and sheet current with minimal leakage was obtained in an AlGaN/GaN HEMT by optimizing the design to include a GaN cap as a tunneling barrier and an AlN interbarrier to increase 2DEG confinement. Furthermore, a novel technique using a 325 nm, surface sensitive laser to perform micro-Raman thermal mapping on HEMTs was developed. The technique utilized higher order A1(LO) phonons for higher thermal sensitivity. Lastly, progress was made toward GaN THz emitter development by achieving low series resistance operation through improved metal contact selection and ultra high Ge donor doping via MBE.

This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

The highly industrialized world we live in depends for its survival and further growth on advanced electronic technologies which place a premium on rapidly improved performance versus size, weight, and cost. Small computers, high-definition TV, digital camcorders, flat-panel displays, and robotic systems are but a few examples of miniatured device technologies which are of critical importance to emerging societal, industrial, defense, and space needs. All of these technologies depend sensitively on the availability of miniature thin film components in array and/or integrated formats. This book provides that first multi-topical coverage of the semiconductor, optical, superconductor, magnetic, and ferroelectric devices and technologies responding to these needs. This book comprises five topical volumes edited by world authorities in their fields, id est semiconductor junction devices, semiconductor optics, superconducting film devices, magnetic film devices, and ferroelectric film devices. Well-known experts were invited to cover recent progress in aspects ranging from deposition and fabrication to device modeling, measurements, and new cutting-edge design approached for improved performance. This multitopic approach effectively demonstrates the broad-based and pervasive character of thin film techniques that impact and control a vast array of device functions that are critical to developments in computer technology, communications, television, defense and space systems, and industrial and consumer products. Readers are provided with both broad critical overviews and research level analysis and technical details. Key Features * A comprehensive discussion of the most promising and completely developed of thin film devices which impact the entire field of high-tech components and systems for commercial, defense and space applications * Edited and written by internationally known, authoritative experts and innovators, familiar with all aspects of research and development in their fields and with current and potential applications * Presents the reader with informed assessments of all candidate solid state film devices now being optimized for advanced application, e.g., in flat panel displays, solar energy conversion, high-speed and power components, radar technology, infrared imaging , advanced computers, laser sources, and numerous other arenas * Provides a well-balanced coverage of materials growth and optimization, thin-film device modelling , device fabrication and characterization, and future development directions;These inputs are critically important to both educators, designers, device technologists and manufacturers, and to system engineers * Furnishes useful insights on processing compatibility, materials and film device stability, interface engineering, cryogenic requirements and operation, lithography and micro-machining, and integrability for sub-systems * Provides a broad-based view of alternative and/or complimentary film device technologies in a single, well-referenced source * Ensures complete and detailed overview of solid-state device topics, comprehensive bibliographical information, and expert guidance in advanced and sophisticated areas of device technology and potental applications * Furnishes invaluable insights on competitive state-of-the-art thin film semiconductor, photonics, superconductor, magnetic and ferroelectric technologies, processing and compatibility,device options, performance potential and prospects for essentially all solid-state film components * An essential information source and primer for educators , researchers, engineers and technology leaders supplying a wealth of background theoretical and experimental details, as well as guidance for further advanced research and development , thesis topics and high-tech product design * Identifies key processing, fabrication, design, integration, compatibility problems and solutions involved in successful development of high-performance and stable device and sub-system architectures.

Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.