The field of vacuum microelectronics (VME) has experienced tremendous growth. VME devices benefit from collision-free motion of electrons in vacuum, enabling faster modulation and higher electron energies than possible with solid-state structures. In addition, VME devices can operate in a wide temperature range (4

The 31 papers, about half of the symposium's presentations, were selected to provide a representative sampling of the present status of materials used in vacuum microelectronics. They range across all aspects of electron field emission from theory and physical mechanisms to device structure, but many focus on the fabrication, characterization, and modeling of electron emissive materials. The sections cover field-emitter arrays and applications, carbon and wide-bandgap cathodes, and other cathode materials. Reproduced from typescripts. Annotation copyrighted by Book News, Inc., Portland, OR

This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.

Proceedings of the April 1998 symposium, which focused on high-density package solutions, with an emphasis on flip-chip technology. Topics include interfacial adhesion behavior, flip-chip interconnections, high-density substrates, thermomechanical behavior, and packaging reliability issues. Articles address the fracture of polymer interfaces and the delamination tendencies seen with flip-chip interconnections on organic substrates, under-bump metallurgy issues, and overall reliability issues. Annotation copyrighted by Book News, Inc., Portland, OR

This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.