Aside from water the materials which are used by mankind in highest quantities arecementitious materials and concrete. This book shows how the quality of the technical product depends on mineral phases and their reactions during the hydration and strengthening process. Additives and admixtures infl uence the course of hydration and the properties. Options of reducing the CO2-production in cementitious materials are presented and numerous examples of unhydrous and hydrous phases and their formation conditions are discussed. This editorial work consists of four parts including cement composition and hydration, Special cement and binder mineral phases, Cementitious and binder materials, and Measurement and properties. Every part contains different contributions and covers a broad range within the area. Contents Part I: Cement composition and hydration Diffraction and crystallography applied to anhydrous cements Diffraction and crystallography applied to hydrating cements Synthesis of highly reactive pure cement phases Thermodynamic modelling of cement hydration: Portland cements – blended cements – calcium sulfoaluminate cements Part II: Special cement and binder mineral phases Role of hydrotalcite-type layered double hydroxides in delayed pozzolanic reactions and their bearing on mortar dating Setting control of CAC by substituted acetic acids and crystal structures of their calcium salts Crystallography and crystal chemistry of AFm phases related to cement chemistry Part III: Cementitious and binder materials Chemistry, design and application of hybrid alkali activated binders Binding materials based on calcium sulphates Magnesia building material (Sorel cement) – from basics to application New CO2-reduced cementitious systems Composition and properties of ternary binders Part IV: Measurement and properties Characterization of microstructural properties of Portland cements by analytical scanning electron microscopy Correlating XRD data with technological properties No cement production without refractories

The 13th International Conference on Low Temperature Physics, organized by the National Bureau of Standards, Los Alamos Scientific Laboratory, and the University of Colorado, was held in Boulder, Colorado, August 21 to 25, 1972, and was sponsored by the National Science Foundation, the U.S. Army Office of Scientific Research, the U.S. Atomic Energy Commission, the U.S. Navy Office of Naval Research, the International Institute of Refrigeration, and the Internation al Union of Pure and Applied Physics. This international conference was the latest in a series of biennial conferences on low temperature physics, the first of which was held at the Massachusetts Institute of Technology in 1949. (For a complete list of previous L T conferences see p. viii. Many of these past conferences have been coordinated and sponsored by the Commission on Very Low Temperatures of IUPAP. Subsequent LT conferences will be scheduled triennially beginning in 1975. LT 13 was attended by approximately 1015 participants from twenty five countries. Eighteen plenary lectures and 550 contributed papers were presented at the Conference. The Conference began with brief introductory and welcoming remarks by Dr. R.H. Kropschot on behalf of the Organizing Committee, Professor J. Bardeen on behalf of the Commission on Very Low Temperatures of the IUP AP, and Pro fessor O.V. Lounasmaa on behalf of the International Institute of Refrigeration. The eighth London Award was then presented by Professor E.

The aim of this reference work is to provide the researcher with a comprehensive compilation of all up to now crystallographically identified inorganic substances in only one volume. All data have been processed and critically evaluated by the "Pauling File" editorial team using a unique software package. Each substance is represented in a single row containing information adapted to the number of chemical elements.

Volume 46 of Reviews in Mineralogy and Geochemistry covers the international meeting on "Advances on Micas (Problems, Methods, Applications in Geodynamics)" convened in Rome in 2000. The topics of this meeting were the crystalchemical, petrological, and historical aspects of the micas. Thirteen invited plenary lectures, which consisted mostly of reviews, are presented in expanded detail in this volume. Contents: Mica crystal chemistry and the influence of pressure, temperature, and solid solution on atomistic models Behavior of micas at high pressure and high temperature Structural features of micas Crystallographic basis of polytypism and twinning in micas Investigation of micas using advanced transmission electron microscopy Optical and Mössbauer spectroscopy of iron in micas Infrared spectroscopy of micas X-ray absorption spectroscopy of the micas Constraints on studies of metamorphic K-Na white micas Modal spaces for pelitic schists Phyllosilicates in very low-grade metamorphism: Transformation to micas Historical perspective

Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.

The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.