Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Group III-Nitride (III-N) semiconductors are of high interest due to their thermal and electrical properties. Opposed to other III-V group semiconductors III-N semiconductors are hexagonal wurtzite structures that have a direct bandgap across the entire composition range. This wide bandgap range covers from the deep ultra-violet to the infrared region of the electromagnetic spectrum. This makes the III-N semiconductor group ideal for LEDs, laser diodes and photodetectors. This thesis presents an in-depth study to the growth of III-Nitrides on Silicon Carbide (SiC) templates. Due to the difficulty in growing bulk crystals for the III-Nitrides, non-native substrates must be used. Because of this, there exists a lattice mismatch between the substrates and thin films grown on top. SiC proves to be an ideal substrate as the lattice mismatch is around 3.5%. Thin films of III-N were grown upon commercially purchased SiC templates using remote plasma enhanced metal organic chemical vapor deposition (RP-MOCVD) in the Lakehead University Semiconductor Research Lab. Results were characterized using x-ray diffraction (XRD), atomic force microscope (AFM), Energy-dispersive X-ray spectroscopy (EDX) and Ramen spectroscopy.

Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120C) by crystallization of amorphous semicon