The possibility of building a computer that takes advantage of the most subtle nature of quantum physics has been driving a lot of research in atomic and solid state physics for some time. It is still not clear what physical system or systems can be used for this purpose. One possibility that has been attracting significant attention from researchers is to use the spin state of an electron confined in a semiconductor quantum dot. The electron spin is magnetic in nature, so it naturally is well isolated from electrical fluctuations that can a loss of quantum coherence. It can also be manipulated electrically, by taking advantage of the exchange interaction. In this work we describe several experiments we have done to study the electron spin properties of lateral quantum dots. We have developed lateral quantum dot devices based on the silicon metal-oxide-semiconductor transistor, and studied the physics of electrons confined in these quantum dots. We measured the electron spin excited state lifetime, which was found to be as long as 30 ms at the lowest magnetic fields that we could measure. We fabricated and characterized a silicon double quantum dot. Using this double quantum dot design, we fabricated devices which combined a silicon double quantum dot with a superconducting microwave resonator. The microwave resonator was found to be sensitive to two-dimensional electrons in the transistor channel, which we measured and characterized. We developed a new method for extracting information from random telegraph signals, which are produced when we observe thermal fluctuations of electrons in quantum dots. The new statistical method, based on the hidden Markov model, allows us to detect spin-dependent effects in such fluctuations even though we are not able to directly observe the electron spin. We use this analysis technique on data from two experiments involving gallium arsenide quantum dots and use it to measure spin-dependent tunneling rates. Our results advance the understanding of electron spin physics in lateral quantum dots, in silicon and in gallium arsenide.

This thesis offers a comprehensive introduction to surface acoustic waves in the quantum regime. It addresses two of the most significant technological challenges in developing a scalable quantum information processor based on spins in quantum dots: (i) decoherence of the electronic spin qubit due to the surrounding nuclear spin bath, and (ii) long-range spin-spin coupling between remote qubits. Electron spins confined in quantum dots (QDs) are among the leading contenders for implementing quantum information processing. To this end, the author pursues novel strategies that turn the unavoidable coupling to the solid-state environment (in particular, nuclear spins and phonons) into a valuable asset rather than a liability.

This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

Filling a gap in the literature, this up-to-date introduction to the field provides an overview of current experimental techniques, basic theoretical concepts, and sample fabrication methods. Following an introduction, this monograph deals with optically active quantum dots and their integration into electro-optical devices, before looking at the theory of quantum confined states and quantum dots interacting with the radiation field. Final chapters cover spin-spin interaction in quantum dots as well as spin and charge states, showing how to use single spins for break-through quantum computation. A conclusion and outlook round off the volume. The result is a primer providing the essential basic knowledge necessary for young researchers entering the field, as well as semiconductor and theoretical physicists, PhD students in physics and material sciences, electrical engineers and materials scientists.

This book describes the full range of possible strategies for laterally aligning self-assembled quantum dots on a substrate surface, beginning with pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning. The text addresses both short- and long-range ordering phenomena and introduces future high integration of single quantum dot devices on a single chip. Contributions by well-known experts ensure that all relevant quantum-dot heterostructures are elucidated from diverse perspectives.