This book will provide a comprehensive technical guide covering fundamentals, recent advances and open issues in wireless communications and networks to the readers. The objective of the book is to serve as a valuable reference for students, educators, scientists, faculty members, researchers, engineers and research strategists in these rapidly evolving fields and to encourage them to actively explore these broad, exciting and rapidly evolving research areas.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.

Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Appropriate for upper level undergraduate or graduate courses in microwave transistor amplifiers and oscillators. It would also be useful for short-courses in companies that design and produce these devises. A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) -- using scattering parameters techniques.

"Power is dissipated (lost) when this current flows through any resistance, which includes the amplifier's transistor. This dissipated power is the product of the current in the load times the voltage difference between the supply voltage to the amplifier and the output signal voltage. When the voltage supplied to the amplifier is a constant value, and by far the most common design practice, the situation in Fig. 1-2a results. Power dissipation in the amplifier is maximum when the output signal voltage is 1/2 of the supply voltage. When the output signal voltage is higher, even though the current value is larger the voltage drop is less and the power dissipation is lower. Similarly, when the output signal voltage is small, even though the voltage drop is now large the current in the load is smaller and again the power dissipation is lower"--

This much-anticipated volume builds on the author's best selling and classic work, RF Power Amplifiers for Wireless Communications (Artech House, 1999), offering experienced engineers a more in-depth understanding of the theory and design of RF power amplifiers. An invaluable reference tool for RF, digital and system level designers, the book includes discussions on the most critical topics for professionals in the field, including envelope power management schemes and linearization.