Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

Ion Implantation Science and Technology: Second Edition, just like the first edition, serves as both an introduction and tutorial to the science, techniques, and machines involved in the subject. The book is divided into two parts - Part 1: Ion Implantation Science and Part 2: Ion Implantation Technology. Part 1 covers topics such as the stopping and range of ions in solids; ion implantation damage in silicon; experimental annealing and activation; and the measurement on ion implantation. Part 2 includes ion optics and focusing on implanter design; photoresist problems and particle contamination; ion implantation diagnostics and process control; and emission of ionizing radiation from ion implanters. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.

Ion implantation is the primary technology which is used in the semiconductor industry to introduce impurities into semiconductors to form devices and VLSI circuits. All VLSI manufacturing includes ion implantation steps. The technology has universal acceptance because of the accuracy of the number of implanted atoms, and the uniformity of the implantation across large semiconductor wafers. This book is a tutorial presentation of the physics, processes, technology and operation of ion implantation. Its purpose is to serve as a teaching manual, a source book of relevant data, and a compilation of comments from some of the world's most experienced practitioners of ion implantation. The primary problems in using ion implantation in VLSI processing are wafer cooling, dielectric charging, particulate contamination and process control. Each of these problems is addressed in a separate chapter. Each section is described from first principles in simple tutorial steps, while keeping the goal of finding answers to the most modern and complex problems in VLSI processing.