The Handbook of Ion Sources delivers the data needed for daily work with ion sources. It also gives information for the selection of a suitable ion source and ion production method for a specific application. The Handbook concentrates on practical aspects and introduces the principle function of ion sources. The basic plasma parameters are defined and discussed. The working principles of various ion sources are explained, and examples of each type of ion source are presented with their operational data. Tables of ion current for various elements and charge states summarize the performance of different ion sources. The problems related to the production of ions of non-gaseous elements are detailed, and data on useful materials for evaporation and ion source construction are summarized. Additional chapters are dedicated to extraction and beam formation, ion beam diagnosis, ion source electronics, and computer codes for extraction, acceleration, and beam transport. Emittance and brilliance are described and space charge effects and neutralization discussed. Various methods for the measurement of current, profile, emittance, and time structure are presented and compared. Intensity limits for these methods are provided for different ion energies. Typical problems related to the operation of ion source plasmas are discussed and practical examples of circuits are given. The influence of high voltage on ion source electronics and possibilities for circuit protection are covered. The generation of microwaves and various microwave equipment are described and special problems related to microwave operation are summarized. The Handbook of Ion Sources is a valuable reference on the subject, of benefit to practitioners and graduate students interested in accelerators, ion implantation, and ion beam techniques.

Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.

WORLD-CLASS SEMICONDUCTOR MANUFACTURING EXPERTISE AT YOUR FINGERTIPS This is a comprehensive reference to the semiconductor manufacturing process and ancillary facilities -- from raw material preparation to packaging and testing, applying basics to emerging technologies. Readers charged with optimizing the design and performance of manufacturing processes will find all the information necessary to produce the highest quality chips at the lowest price in the shortest time possible. The Semiconductor Manufacturing Handbook provides leading-edge information on semiconductor wafer processes, MEMS, nanotechnology, and FPD, plus the latest manufacturing and automation technologies, including: Yield Management Automated Material Handling System Fab and Cleanroom Design and Operation Gas Abatement and Waste Treatment Management And much more Written by 60 international experts, and peer reviewed by a seasoned advisory board, this handbook covers the fundamentals of relevant technology and its real-life application and operational considerations for planning, implementing, and controlling manufacturing processes. It includes hundreds of detailed illustrations and a list of relevant books, technical papers, and websites for further research. This inclusive, wide-ranging coverage makes the Semiconductor Manufacturing Handbook the most comprehensive single-volume reference ever published in the field. STATE-OF-THE-ART SEMICONDUCTOR TECHNOLOGIES AND MANUFACTURING PROCESSES: SEMICONDUCTOR FUNDAMENTALS How Chips Are Designed and Made * Substrates * Copper and Low-k Dielectrics * Silicide Formation * Plasma * Vacuum * Photomask WAFER PROCESSING TECHNOLOGIES Microlithography * Ion Implantation * Etch * PVD/ALD * CVD * ECD * Epitaxy * CMP * Wet Cleaning FINAL MANUFACTURING Packaging * Grinding, Stress Relief, Dicing * Inspection, Measurement, and Testing NANOTECHNOLOGY, MEMS, AND FPD GAS AND CHEMICALS Specialty Gas System and DCA * Gas Abatement Systems * Chemical and Slurries Delivery System * Ultra Pure Water FAB YIELD, OPERATIONS, AND FACILITIES Yield Management * Automated Materials Handling System * Metrology * Six Sigma * Advanced Process Control * EHS * Fab Design and Construction * Cleanroom * Vibration and Acoustic Control * ESD * Airborne Molecular Control * Particle Monitoring * Wastewater Neutralization Systems

This book, by 36 authorities on the subject, deals with ion beam processing for basic sputter etching of samples, for sputter deposition of thin films, for synthesis of material in thin film form, and of the modification of thin film properties.

This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay