Volume III/28 is a supplement to volume III/16a+b Ferroelectrics and Related Substances. It also consists of two parts a and b. The present subvolume III/28a contains data on ferroelectric oxides, supplementing III/16a which appeared in 1981. Subvolume III/28b, due in 1990, will cover non-oxides, supplementing III/16b (published in 1982). Reliable data on both pure compounds and solid solutions, published mostly between 1978 and 1986 and some data from the literature up to early 1988 are critically evaluated and included. The dielectric and ferroelectric behaviour, as well as all other properties relevant to the characterization of these substances are presented in tables and figures. About 22,000 references have been surveyed with the aid of a computer. All values are given in SI units. Rapid localization of the required data is facilitated by an alphabetical index of substances and a two-dimensional survey of substances and properties dealt with in both subvolumes III/28a and III/16a.

Volume III/28 is a supplement to volume III/16a+b Ferroelectrics and Related Substances. It also consists of two parts a and b. Subvolume III/28a which came out in December 1989, contains data on ferroelectric oxides, supplementing III/16a which appeared in 1981. The present subvolume III/28b covers non-oxides, supplementing III/16b (published in 1982). Reliable data on both pure compounds and solid solutions, published mostly between 1978 and 1986 and some data from the literature up to early 1988 are critically evaluated and included. The dielectric and ferroelectric behaviour, as well as all other properties relevant to the characterization of these substances are presented in tables and figures. About 22,000 references have been surveyed with the aid of a computer. All values are given in SI units. Rapid localization of the required data is facilitated by an alphabetical index of substances and a two-dimensional survey of substances and properties dealt with in both subvolumes III/28b and III/16b.

Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.