This book provides an overview of the applications of ion beam techniques in oxide materials. Oxide materials exhibit defect-induced physical properties relevant to applications in sensing, optoelectronics and spintronics. Defects in these oxide materials also lead to magnetism in non-magnetic materials or to a change of magnetic ordering in magnetic materials. Thus, an understanding of defects is of immense importance. To date, ion beam tools are considered the most effective techniques for producing controlled defects in these oxides. This book will detail the ion beam tools utilized for creating defects in oxides.

This thesis investigates the behavior of two candidate materials (a-SiO2 and MgO) for applications in fusion (e.g., the International Thermonuclear Experimental Reactor ITER) and Generation IV fission reactors. Both parts of the thesis – the development of the ionoluminescence technique and the study of the ion-irradiation effects on both materials – are highly relevant for the fields of the ion-beam analysis techniques and irradiation damage in materials. The research presented determines the microstructural changes at different length scales in these materials under ion irradiation. In particular, it studies the effect of the irradiation temperature using several advanced characterization techniques. It also provides much-needed insights into the use of these materials at elevated temperatures. Further, it discusses the development of the ion-beam-induced luminescence technique in different research facilities around the globe, a powerful in situ spectroscopic characterization method that until now was little known. Thanks to its relevance, rigorosity and quality, this thesis has received twoprestigious awards in Spain and France.

Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical and physico-chemical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

The catastrophic effect, as well as a potentially advantageous effect, from energetic beams is the instant high-energy deposition in a local volume, down to the nanoscale, and the rapid cooling processes resulting in changes in the structure and properties of materials that are hard to achieve by other methods. The challenging balance between controlling radiation damage and enhancing material properties has intrigued materials scientists and physicists, as well as engineers in the nuclear and semiconductor industry, and caused them to work closely together for many years. As clearly demonstrated in this volume, many new technologies for creating unique functional devices with energetic particle beams are based on the fundamental study of radiation-induced defect production and evolution. Scientists and engineers working in nuclear engineering, environmental sciences and functional materials share a common language and numerous opportunities for collaboration in this truly interdisciplinary area. Exciting and promising results are presented here, including the most recent progress in fundamental understanding of radiation effects using molecular dynamic (MD) and kinetic Monte Carlo (kMC) simulations, processing of monodisperse nanoparticles by ion implantation, production of a wide variety of nanostructures with the application of focused ion beams (FIB), and creating new types of nanoscale functional devices using high-energy ion tracks. These results demonstrate the important relation between fundamental research on radiation effects and the development of new types of nanoscale functional devices using energetic particles over a wide energy range. Topics include: radiation effects in nuclear materials; ion-beam processing of nanostructures; ion-beam processing of semiconductor devices; ion-beam modification of physical properties; modeling and computer simulation of beam-solid interactions; and ion-beam-assisted deposition and surface modification.

Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more

Conferences have been held in the past on atomic collision phenomena and on the applications of ion beams to semiconductors. However, within the past year it became apparent that there is a growing new area of active research involving the use of ion beams to modify and study the basic properties of metals. As a result a topical conference was organized to bring together for the first time scientists with a wide range of backgrounds and interests related to this field. This book contains the proceed ings of the International Conference on Applications of Ion Beams to Metals which was held in Albuquerque, New Mexico, October 2-4, 1973. Much of the work presented herein represents ideas and concepts which have had little or no previous exposure in the open literature. The application of ion beams to superconducting prop erties for example is quite new, as is the chapter on ion induced surface reactions, which includes primarily oxidation and corrosion studies of implanted materials. These areas, as well as the chapter on implantation alloy formation, indicate important future areas of the application of ion beams to metals. A reading of the chapters on superconductivity and on oxida tion and corrosion can serve to bring one up to date on nearly all the existing information in these areas of the ion beam mod ification of metals. A broad perspective of the oxidation area is given in the invited paper by G. Dearnaley.

This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.