Richly illustrated and written in an easy-to-comprehend style, this highly accessible resource provides novice engineers and engineering students with a solid introduction to the use of electromagnetics (EM) simulation in RF design. Engineers learn how to use EM software to design microwave circuits and to conduct signal integrity analysis of high-speed digital circuits. This authoritative book describes exactly how microwave and high-speed digital circuits operate, offering practitioners clear troubleshooting guidance for their work with these circuits. Professionals and students also benefit from a thorough overview of the wide range of high-frequency circuits and related EM tools being utilized in the field today.

Modern telecommunication systems are highly complex from an algorithmic point of view. The complexity continues to increase due to advanced modulation schemes, multiple protocols and standards, as well as additional functionality such as personal organizers or navigation aids. To have short and reliable design cycles, efficient verification methods and tools are necessary. Modeling and simulation need to accompany the design steps from the specification to the overall system verification in order to bridge the gaps between system specification, system simulation, and circuit level simulation. Very high carrier frequencies together with long observation periods result in extremely large computation times and requires, therefore, specialized modeling methods and simulation tools on all design levels. The focus of Modeling and Simulation for RF System Design lies on RF specific modeling and simulation methods and the consideration of system and circuit level descriptions. It contains application-oriented training material for RF designers which combines the presentation of a mixed-signal design flow, an introduction into the powerful standardized hardware description languages VHDL-AMS and Verilog-A, and the application of commercially available simulators. Modeling and Simulation for RF System Design is addressed to graduate students and industrial professionals who are engaged in communication system design and want to gain insight into the system structure by own simulation experiences. The authors are experts in design, modeling and simulation of communication systems engaged at the Nokia Research Center (Bochum, Germany) and the Fraunhofer Institute for Integrated Circuits, Branch Lab Design Automation (Dresden, Germany).

Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book: Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors Details active device modeling techniques for transistors and parasitic extraction methods for active devices Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart Covers power-sensing devices including four-port directional couplers and new types of reflectometers Presents RF filter designs for power amplifiers as well as application examples of special filter types Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.

This comprehensive new resource presents a detailed look at the modeling and simulation of microwave semiconductor control devices and circuits. Fundamental PIN, MOSFET, and MESFET nonlinear device modeling are discussed, including the analysis of transient and harmonic behavior. Considering various control circuit topologies, the book analyzes a wide range of models, from simple approximations, to sophisticated analytical approaches. Readers find clear examples that provide guidance in how to use specific modeling techniques for their challenging projects in the field. Numerous illustrations help practitioners better understand important device and circuit behavior, revealing the relationship between key parameters and results. This authoritative volume covers basic and complex mathematical models for the most common semiconductor control elements used in today’s microwave and RF circuits and systems.

Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.

This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.

This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.