Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.

There has been a resurgence of interest in light-induced water splitting as the search for storable carbon neutral energy becomes more urgent. Although the history of the basic idea dates back more than four decades, efficient, economical and stable integrated devices have yet to be realized. In the continuing quest for such devices, the field of photoelectrochemistry is entering a new phase where the extraordinary interdisciplinary of the research and development efforts are opening new avenues. This aspect of current research effort is reflected in the chapters of this book, which encompass present thinking in the various disciplines such as materials science, photo-electrochemistry and interfaces that can contribute to realization of viable solar fuel generators. This book presents a blend of the background science and recent advances in the field of photoelectrochemical water splitting, and includes aspects that point towards medium to long term future realization. The content of the book goes beyond the more traditional approaches to the subject by including topics such as novel excitation energy processes that have only been realized so far in advanced photonics. The comprehensive overview of current activities and development horizons provided by the impressive collection of internationally renowned authors therefore represents a unique reflection of current thinking regarding water splitting by light.

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Features new chapters on laser lighting, addressing the latest advances on this topic Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates

In this book, the authors gather and present current research from across the globe in the study of the properties, technological applications and health issues relating to indium. Topics discussed include the properties of indium, gallium and Ga-In alloys in confined geometry; indium as a co-catalyst in Novel Cu or Ni catalysts for reduction of biomass derived fatty acids to alcohols; reliability of indium tin oxide thin films; indium reagents for chemical transformations; indium atoms using electron and optical spectroscopy; indium sulphide-manganese ore; rare earth ions doping on the photoluminescent properties of indium hydroxide; and hydrothermal synthesis of indium tin oxide nanoparticles without chlorine contamination.