Silicon Molecular Beam Epitaxy
Title | Silicon Molecular Beam Epitaxy PDF eBook |
Author | E. Kasper |
Publisher | CRC Press |
Pages | 411 |
Release | 2018-05-04 |
Genre | Technology & Engineering |
ISBN | 1351093525 |
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Dissertation Abstracts International
Title | Dissertation Abstracts International PDF eBook |
Author | |
Publisher | |
Pages | 822 |
Release | 1989 |
Genre | Dissertations, Academic |
ISBN |
Energy Research Abstracts
Title | Energy Research Abstracts PDF eBook |
Author | |
Publisher | |
Pages | 886 |
Release | 1992 |
Genre | Power resources |
ISBN |
Oriented Crystallization on Amorphous Substrates
Title | Oriented Crystallization on Amorphous Substrates PDF eBook |
Author | E.I. Givargizov |
Publisher | Springer Science & Business Media |
Pages | 377 |
Release | 2013-11-21 |
Genre | Technology & Engineering |
ISBN | 1489925600 |
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.
Twenty-fifth Annual Report on Materials Research at Stanford University, May 1, 1985 - February 28, 1986
Title | Twenty-fifth Annual Report on Materials Research at Stanford University, May 1, 1985 - February 28, 1986 PDF eBook |
Author | Stanford University. Center for Materials Research |
Publisher | |
Pages | 474 |
Release | 1986 |
Genre | Materials science |
ISBN |
Annual Commencement
Title | Annual Commencement PDF eBook |
Author | Stanford University |
Publisher | |
Pages | 424 |
Release | 1987 |
Genre | |
ISBN |
Twenty-eight Annual Report on Materials Research at Stanford University, January 1,1988-December 31,1988
Title | Twenty-eight Annual Report on Materials Research at Stanford University, January 1,1988-December 31,1988 PDF eBook |
Author | Stanford University. Center for Materials Research |
Publisher | |
Pages | 336 |
Release | 1989 |
Genre | |
ISBN |