These conference proceedings consist of 47 papers addressing a variety of issues concerning in-line methods and monitors for process and yield improvement.

A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.

Praise for the Second Edition "As a comprehensive statistics reference book for quality improvement, it certainly is one of the best books available." —Technometrics This new edition continues to provide the most current, proven statistical methods for quality control and quality improvement The use of quantitative methods offers numerous benefits in the fields of industry and business, both through identifying existing trouble spots and alerting management and technical personnel to potential problems. Statistical Methods for Quality Improvement, Third Edition guides readers through a broad range of tools and techniques that make it possible to quickly identify and resolve both current and potential trouble spots within almost any manufacturing or nonmanufacturing process. The book provides detailed coverage of the application of control charts, while also exploring critical topics such as regression, design of experiments, and Taguchi methods. In this new edition, the author continues to explain how to combine the many statistical methods explored in the book in order to optimize quality control and improvement. The book has been thoroughly revised and updated to reflect the latest research and practices in statistical methods and quality control, and new features include: Updated coverage of control charts, with newly added tools The latest research on the monitoring of linear profiles and other types of profiles Sections on generalized likelihood ratio charts and the effects of parameter estimation on the properties of CUSUM and EWMA procedures New discussions on design of experiments that include conditional effects and fraction of design space plots New material on Lean Six Sigma and Six Sigma programs and training Incorporating the latest software applications, the author has added coverage on how to use Minitab software to obtain probability limits for attribute charts. new exercises have been added throughout the book, allowing readers to put the latest statistical methods into practice. Updated references are also provided, shedding light on the current literature and providing resources for further study of the topic. Statistical Methods for Quality Improvement, Third Edition is an excellent book for courses on quality control and design of experiments at the upper-undergraduate and graduate levels. the book also serves as a valuable reference for practicing statisticians, engineers, and physical scientists interested in statistical quality improvement.

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites