First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.

In 1993, the first edition of The Electrical Engineering Handbook set a new standard for breadth and depth of coverage in an engineering reference work. Now, this classic has been substantially revised and updated to include the latest information on all the important topics in electrical engineering today. Every electrical engineer should have an opportunity to expand his expertise with this definitive guide. In a single volume, this handbook provides a complete reference to answer the questions encountered by practicing engineers in industry, government, or academia. This well-organized book is divided into 12 major sections that encompass the entire field of electrical engineering, including circuits, signal processing, electronics, electromagnetics, electrical effects and devices, and energy, and the emerging trends in the fields of communications, digital devices, computer engineering, systems, and biomedical engineering. A compendium of physical, chemical, material, and mathematical data completes this comprehensive resource. Every major topic is thoroughly covered and every important concept is defined, described, and illustrated. Conceptually challenging but carefully explained articles are equally valuable to the practicing engineer, researchers, and students. A distinguished advisory board and contributors including many of the leading authors, professors, and researchers in the field today assist noted author and professor Richard Dorf in offering complete coverage of this rapidly expanding field. No other single volume available today offers this combination of broad coverage and depth of exploration of the topics. The Electrical Engineering Handbook will be an invaluable resource for electrical engineers for years to come.

Semiconductors and Semimetals

One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.

The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

Optical Materials presents, in a unified form, the underlying physical and structural processes that determine the optical behavior of materials. It does this by combining elements from physics, optics, and materials science in a seamless manner, and introducing quantum mechanics when needed. The book groups the characteristics of optical materials into classes with similar behavior. In treating each type of material, the text pays particular attention to atomic composition and chemical makeup, electronic states and band structure, and physical microstructure so that the reader will gain insight into the kinds of materials engineering and processing conditions that are required to produce a material exhibiting a desired optical property. The physical principles are presented on many levels, including a physical explanation, followed by formal mathematical support and examples and methods of measurement. The reader may overlook the equations with no loss of comprehension, or may use the text to find appropriate equations for calculations of optical properties. - Presents the optical properties of metals, insulators, semiconductors, laser materials, and non-linear materials - Physical processes are discussed and quantified using precise mathematical treatment, followed by examples and a discussion of measurement methods - Authors combine many years of expertise in condensed matter physics, classical and quantum optics, and materials science - The text is written on many levels and will benefit the novice as well as the expert - Explains the concept of color in materials - Explains the non-linear optical behavior of materials in a unified form - Appendices present rigorous derivations