Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. Case studies supply real-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales.

WelcometotheproceedingsofPATMOS2004,thefourteenthinaseriesofint- national workshops. PATMOS 2004 was organized by the University of Patras with technical co-sponsorship from the IEEE Circuits and Systems Society. Over the years, the PATMOS meeting has evolved into an important - ropean event, where industry and academia meet to discuss power and timing aspects in modern integrated circuit and system design. PATMOS provides a forum for researchers to discuss and investigate the emerging challenges in - sign methodologies and tools required to develop the upcoming generations of integrated circuits and systems. We realized this vision this year by providing a technical program that contained state-of-the-art technical contributions, a keynote speech, three invited talks and two embedded tutorials. The technical program focused on timing, performance and power consumption, as well as architectural aspects, with particular emphasis on modelling, design, charac- rization, analysis and optimization in the nanometer era. This year a record 152 contributions were received to be considered for p- sible presentation at PATMOS. Despite the choice for an intense three-day m- ting, only 51 lecture papers and 34 poster papers could be accommodated in the single-track technical program. The Technical Program Committee, with the - sistance of additional expert reviewers, selected the 85 papers to be presented at PATMOS and organized them into 13 technical sessions. As was the case with the PATMOS workshops, the review process was anonymous, full papers were required, and several reviews were received per manuscript.

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

The book provides a comprehensive coverage of different aspects of low power circuit synthesis at various levels of design hierarchy; starting from the layout level to the system level. For a seamless understanding of the subject, basics of MOS circuits has been introduced at transistor, gate and circuit level; followed by various low-power design methodologies, such as supply voltage scaling, switched capacitance minimization techniques and leakage power minimization approaches. The content of this book will prove useful to students, researchers, as well as practicing engineers.

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Emerging Technologies and Circuits contains a set of outstanding papers, keynote and tutorials presented during 3 days at the International Conference On Integrated Circuit Design and Technology (ICICDT) held in June 2008 in Minatec, Grenoble.

In Thermal and Power Management of Integrated Circuits, power and thermal management issues in integrated circuits during normal operating conditions and stress operating conditions are addressed. Thermal management in VLSI circuits is becoming an integral part of the design, test, and manufacturing. Proper thermal management is the key to achieve high performance, quality and reliability. Performance and reliability of integrated circuits are strong functions of the junction temperature. A small increase in junction temperature may result in significant reduction in the device lifetime. This book reviews the significance of the junction temperature as a reliability measure under nominal and burn-in conditions. The latest research in the area of electro-thermal modeling of integrated circuits will also be presented. Recent models and associated CAD tools are covered and various techniques at the circuit and system levels are reviewed. Subsequently, the authors provide an insight into the concept of thermal runaway and how it may best be avoided. A section on low temperature operation of integrated circuits concludes the book.