II-VI Compounds covers the general idea of the way in which II-VI compounds behave. The book describes the fundamental nature of II-VI compounds; the preparation and single crystal growth; and the fundamental optical properties of II-VI compounds. The text also discusses the luminescence; the photo conductivity and associated behavior; the transport properties; and the applications of II-VI compounds. Students taking materials science or engineering courses will find the book useful.

II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Emphasis is placed on the wide bandgap emitters where much progress has occurred recently.The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self-organized, low-dimensional structures.II_VI Semiconductor Materials and Their Applications is a valuable reference book for researchers in the field as well as a textbook for materials science and applied physics courses.

The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.

Vols. III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of todays scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing data, figures and references. Easy access to the documents is provided via substance and property keywords, listings and full text retrieval.

Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Each of the 23 chapters of this book is a contribution in the form of a report, a review article or a full length research paper. The first few contributions present a description of the fundamental aspects of these alloys. The next few contributions are followed by a treatment of superlattices. The later contributions describe the more important devices which can be produced using these semiconductors. The book concludes with an examination of the properties of these alloys when they are in the form of thin films