The era of Sustainable and Energy Efficient Nanoelectronics and Nanosystems has come. The research and development on Scalable and 3D integrated Diversified functions together with new computing architectures is in full swing. Besides data processing, data storage, new sensing modes and communication capabilities need the revision of process architecture to enable the Heterogeneous co integration of add-on devices with CMOS: the new defined functions and paradigms open the way to Augmented Nanosystems. The choices for future breakthroughs will request the study of new devices, circuits and computing architectures and to take new unexplored paths including as well new materials and integration schmes. This book reviews in two sections, including seven chapters, essential modules to build Diversified Nanosystems based on Nanoelectronics and finally how they pave the way to the definition of Nanofunctions for Augmented Nanosystems.

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

In Thermal and Power Management of Integrated Circuits, power and thermal management issues in integrated circuits during normal operating conditions and stress operating conditions are addressed. Thermal management in VLSI circuits is becoming an integral part of the design, test, and manufacturing. Proper thermal management is the key to achieve high performance, quality and reliability. Performance and reliability of integrated circuits are strong functions of the junction temperature. A small increase in junction temperature may result in significant reduction in the device lifetime. This book reviews the significance of the junction temperature as a reliability measure under nominal and burn-in conditions. The latest research in the area of electro-thermal modeling of integrated circuits will also be presented. Recent models and associated CAD tools are covered and various techniques at the circuit and system levels are reviewed. Subsequently, the authors provide an insight into the concept of thermal runaway and how it may best be avoided. A section on low temperature operation of integrated circuits concludes the book.

This textbook introduces methods of accelerating transient stability (dynamic) simulation and electromagnetic transient simulation on massively parallel processors for large-scale AC-DC grids – two of the most common and computationally onerous studies done by energy control centers and research laboratories for the planning, design, and operation of such integrated grids for ensuring the security and reliability of electric power. Simulation case studies provided in the book range from small didactic test circuits to realistic-sized AC-DC grids, and special emphasis is placed on detailed device-level multi-physics models for power system equipment and decomposition techniques for simulating large-scale systems. Parallel Dynamic and Transient Simulation of Large-Scale Power Systems: A High Performance Computing Solution is a comprehensive state-of-the-art guide for upper-level undergraduate and graduate students in power systems engineering. Practicing engineers, software developers, and scientists working in the power and energy industry will find it to be a timely and valuable reference for solving potential problems in their design and development activities. Detailed device-level electro-thermal modeling for power electronic systems in DC grids; Provides comprehensive dynamic and transient simulation of integrated large-scale AC-DC grids; Offers detailed models of renewable energy system models.

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Current and voltage applied to the magnetic nanopillars induce a spin injection and an accumulation of nonequilibrium charges in a nanosize magnetic cell and result a spin torque exerted on the magnetic moment. Using such torques, we may amplify a precession of magnetization and induct a magnetization switching. These phenomena provide new techniques to write information into tiny magnetic cells and to construct oscillators and rectifiers that are several tens of nanometers in size. In this chapter, spin injections, and current and voltage-induced spin torques in magnetic multilayers, which show giant magnetoresistance effect in current-perpendicular-to-plane (CPP-GMR) geometry, and magnetic tunneling junctions are described. Further, mechanisms of spin injection and voltage-induced magnetization switching and its high-speed observations are explained. Then, phenomena related to spin injection, namely, spin-transfer oscillation and the spin-torque diode effect, are described. Finally, applications related to the spin-injection technology are reviewed.