Material synthesis by the transformation of organometallic compounds (precursors) by vapor deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) has been in the forefront of modern day research and development of new materials. There exists a need for new routes for designing and synthesizing new precursors as well as the application of established molecular precursors to derive tuneable materials for technological demands. With regard to the precursor chemistry, a most detailed understanding of the mechanistic complexity of materials formation from molecular precursors is very important for further development of new processes and advanced materials. To emphasize and stimulate research in these areas, this volume comprises a selection of case studies covering various key-aspects of the interplay of precursor chemistry with the process conditions of materials formation, particularly looking at the similarities and differences of CVD, ALD and nanoparticle synthesis, e.g. colloid chemistry, involving tailored molecular precursors.

Four novel diamine adducts of bis(hexafluoroacetylacetonato)zinc [Zn(hfa)2·(diamine)] can be synthesized in a single step reaction. Single crystal x-ray diffraction studies reveal monomeric, six-coordinate structures. The thermal stabilities and vapor phase transport properties of these complexes are considerably greater than those of conventional solid/liquid zinc metal-organic chemical vapor deposition (MOCVD) precursors. Of the four complexes, bis(1,1,1,5,5,5-hexafluoro-2,4-pentadionato)(N,N '-diethylethylenediamine)zinc [Zn(hfa)2 ( N,N'-DEA)], is particularly effective in the growth of thin films of the transparent conducting oxide Zn- and Sn-doped In2O3 (ZITO) due to its superior volatility and low melting point of 64°C.

Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

The synthesis and characterization of a new magnesium MOCVD precursor, Mg(dpm)2(TMEDA) is detailed. It is shown that the donating ligand TMEDA prevents oligomerization and subsequent volatility depression as observed in the commonly used [Mg(dpm)2]2. The superiority of Mg(dpm)2(TMEDA) as an MOCVD precursor is explicitly demonstrated by growth of epitaxial MgO thin films on single-crystal SrTiO3 substrates.