With the exponential growth of the number of Internet nodes, the volume of the data transported on the backbone has increased with the same trend. The load of the global Internet backbone will soon increase to tens of terabits per second. This indicates that the backbone bandwidth requirements will increase by a factor of 50 to 100 every seven years. Transportation of such high volumes of data requires suitable media with low loss and high bandwidth. Among the available transmission media, optical fibers achieve the best performance in terms of loss and bandwidth. High-speed data can be transported over hundreds of kilometers of single-mode fiber without significant loss in signal integrity. These fibers progressively benefit from reduction of cost and improvement of perf- mance. Meanwhile, the electronic interfaces used in an optical network are not capable of exploiting the ultimate bandwidth of the fiber, limiting the throughput of the network. Different solutions at both the system and the circuit levels have been proposed to increase the data rate of the backbone. System-level solutions are based on the utilization of wave-division multiplexing (WDM), using different colors of light to transmit s- eral sequences simultaneously. In parallel with that, a great deal of effort has been put into increasing the operating rate of the electronic transceivers using highly-developed fabrication processes and novel c- cuit techniques.

This book presents several circuits that are required for the full integration of an optical transmitter in standard CMOS. The main emphasis is placed on high-speed receivers with a bitrate of up to 1 Gb/s. The possibility of including the photodiode in a receiver is investigated and the problems encountered are discussed.

This book describes the design of optical receivers that use the most economical integration technology, while enabling performance that is typically only found in very expensive devices. To achieve this, all necessary functionality, from light detection to digital output, is integrated on a single piece of silicon. All building blocks are thoroughly discussed, including photodiodes, transimpedance amplifiers, equalizers and post amplifiers.

Optical communications is expanding into new applications such as infrared wireless communications; therefore, designing high performance circuits has gained considerable importance. In this dissertation a wide dynamic-range variable-gain transimpedance amplifier (TIA) is introduced. It adopts a regulated cascode (RGC) amplifier and an operational transconductance amplifier (OTA) as the feed forward gain element to control gain and improve the overload of the optical receiver. A fully-differential variable-gain TIA in a 0.35[micron] CMOS technology is realized. It provides a bit error rate (BER) less than 10-12 for an input current from 6[mu]A-3mA at 3.3V power supply. For the transimpedance gain variation, from 0.1k[omega] to 3k[omega], -3dB bandwidth is higher than 1.7GHz for a 0.6pF photodiode capacitance. The power dissipations for the highest and the lowest gains are 8.2mW and 24.9mW respectively. A new technique for designing uniform multistage amplifiers (MA) for high frequency applications is introduced. The proposed method uses the multi-peak bandwidth enhancement technique while it employs identical, simple and inductorless stages. It has several advantages, such as tunability of bandwidth and decreased sensitivity of amplifier stages, to process variations. While all stages of the proposed MA topology are identical, the gain-bandwidth product can be extended several times. Two six-stage amplifiers in a TSMC 0.35[micron] CMOS process were designed using the proposed topology. Measurements show that the gain can be varied for the first one between 16dB and 44dB within the 0.7-3.2GHz bandwidth and for the second one between 13dB and 44dB within a 1.9-3.7GHz bandwidth with less than 5.2nV/[square root]Hz noise. Although the second amplifier has a higher gain bandwidth product, it consumes more power and occupies a wider area. A technique for capacitance multiplication is utilized to design a tunable loop filter. Current and voltage mode techniques are combined to increase the multiplication factor (M). At a high input dynamic range, M is adjustable and the capacitance multiplier performs linearly at high frequencies. Drain-source voltages of paired transistors are equalized to improve matching in the current mirrors. Measurement of a prototype loop filter IC in a 0.5[micron] CMOS technology shows 50[mu]A current consumption for M=50. Where 80pF capacitance is employed, the capacitance multiplier realizes an effective capacitance varying from 1.22nF up to 8.5nF.

This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical sensors.

This book describes optical receiver solutions integrated in standard CMOS technology, attaining high-speed short-range transmission within cost-effective constraints. These techniques support short reach applications, such as local area networks, fiber-to-the-home and multimedia systems in cars and homes. The authors show how to implement the optical front-end in the same technology as the subsequent digital circuitry, leading to integration of the entire receiver system in the same chip. The presentation focuses on CMOS receiver design targeting gigabit transmission along a low-cost, standardized plastic optical fiber up to 50m in length. This book includes a detailed study of CMOS optical receiver design – from building blocks to the system level.

This book opens with the basics of the design of opto-electronic interface circuits. The text continues with an in-depth analysis of the photodiode, transimpedance amplifier (TIA) and limiting amplifier (LA). To thoroughly describe light detection mechanisms in silicon, first a one-dimensional and second a two-dimensional model is developed. All material is experimentally verified with several CMOS implementations, with ultimately a fully integrated Gbit/s optical receiver front-end including photodiode, TIA and LA.