The rapid growth in the applications of electronic materials has created an increasing demand for reliable techniques for examining and characterizing these materials. This book explores the area of x-ray diffraction and the techniques available for deployment in research, development, and production. It maps the theoretical and practical background necessary to study single crystal materials using high resolution x-ray diffraction and topography. It combines mathematical formalism with graphical explanations and hands-on advice for interpreting data, thus providing the theoretical and practical background for applying these techniques in scientific and industrial materials characterization

X-Ray Diffraction Topography presents an elementary treatment of X-ray topography which is comprehensible to the non-specialist. It discusses the development of the principles and application of the subject matter. X-ray topography is the study of crystals which use x-ray diffraction. Some of the topics covered in the book are the basic dynamical x-ray diffraction theory, the Berg-Barrett method, Lang’s method, double crystal methods, the contrast on x-ray topography, and the analysis of crystal defects and distortions. The crystals grown from solution are covered. The naturally occurring crystals are discussed. The text defines the meaning of melt, solid state and vapour growth. An analysis of the properties of inorganic crystals is presented. A chapter of the volume is devoted to the characteristics of metals. Another section of the book focuses on the production of ice crystals and the utilization of oxides as laser materials. The book will provide useful information to chemists, scientists, students and researchers.

Partial Contents: Early experimental proofs of the dynamical theory; Topography in magnetism: domain and phase transition investigations; Diffraction topographic investigations of crystals under applied electric fields; Dependence of defect arrangement in crystals on surface morphology and on conditions of growth from solution; Interaction of slip bands with grain boundaries - observation by white beam SR topography; In-situ X-ray topography studies during the MBE growth process of InGaAs strained layers; Double- and triple-crystal X- ray diffraction analysis of semiconductor quantum wires; Applications in multiple crystal diffractometry; Interpretation of the diffraction profile resulting from strain relaxation in epilayers; Study of thin buried interfaces in III-V compound hetero-structures by high resolution X-ray diffraction.