This issue discusses the latest developments in the growth, characterization, device processing and applications of high-purity silicon in either bulk or epitaxial form. Information is given on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states. Device and circuit aspects are also covered. Advanced substrates such as SOI, strained Si and germanium-on-insulator are discussed.

"This Proceedings Volume includes papers that were presented at the Eighth Symposium on High Purity Silicon held in Honolulu, Hawaii at the 206th Meeting of the Electrochemical Society, October 3-8, 2004"--Pref.

The issue of the 10th High Purity Silicon symposium provides an overview of the latest developments in the growth, characterization, devices processing, and application of high purity silicon in either bulk or epitaxial form. The emphasis is on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states in high purity and high resistivity silicon for superior device performances. Device and circuit aspects related to the application of devices fabricated on high resistivity silicon wafers will also be addressed. Special attention will be given to alternative and high-mobility substrates and their material and device aspects.

"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.

This volume contains the proceedings of the Seventh International Conference on Phonon Scattering in Condensed Matter held August 3-7, 1992, at Cornell University in Ithaca, NY, USA. The preceding conferences were held at: St. Maxime and Paris (France) 1972, Nottingham (UK) 1975, Providence (USA) 1979, Stuttgart (Germany) 1983, Urbana (USA) 1986, and Heidelberg (Germany) 1989. The Heidelberg conference was held jointly with the Third International Con ference on Phonon Physics. The next conference, to be held in August, 1995, in Sapporo, Japan, and hosted by Professor T. Nakayama and his colleagues, will also be such a joint conference. This conference was attended by 227 scientists from 27 countries, and covered all aspects of phonon scattering in condensed matter, ranging from the more traditional topics of thermal conductivity, Kapitza resistance, and ballistic phonon propagation to the recently added topics, such as electron-phonon interaction in high-T c superconductors, the use of phonons in particle detection, and phonons in confined geometries. The 207 papers arranged in 11 chapters in this volume are a cross section of the present activities in the quite obviously vibrant field of phonons and their interactions.