The State of Memory Technology Over the past decade there has been rapid growth in the speed of micropro cessors. CPU speeds are approximately doubling every eighteen months, while main memory speed doubles about every ten years. The International Tech nology Roadmap for Semiconductors (ITRS) study suggests that memory will remain on its current growth path. The ITRS short-and long-term targets indicate continued scaling improvements at about the current rate by 2016. This translates to bit densities increasing at two times every two years until the introduction of 8 gigabit dynamic random access memory (DRAM) chips, after which densities will increase four times every five years. A similar growth pattern is forecast for other high-density chip areas and high-performance logic (e.g., microprocessors and application specific inte grated circuits (ASICs)). In the future, molecular devices, 64 gigabit DRAMs and 28 GHz clock signals are targeted. Although densities continue to grow, we still do not see significant advances that will improve memory speed. These trends have created a problem that has been labeled the Memory Wall or Memory Gap.

Synthesising fifteen years of research, this authoritative text provides a comprehensive treatment of two major technologies for wireless chip and module interface design, covering technology fundamentals, design considerations and tradeoffs, practical implementation considerations, and discussion of practical applications in neural network, reconfigurable processors, and stacked SRAM. It explains the design principles and applications of two near-field wireless interface technologies for 2.5-3D IC and module integration respectively, and describes system-level performance benefits, making this an essential resource for researchers, professional engineers and graduate students performing research in next-generation wireless chip and module interface design.

Die Bandbreite und Zugriffszeit traditioneller DRAMs reicht nicht mehr aus, um mit der Geschwindigkeit moderner Mikroprozessoren Schritt zu halten. Daher baut man verstärkt Hochleistungs-Speicherchips, deren neue Generation das Thema dieses Buches bildet. Die Autorin, eine international anerkannte Spezialistin, diskutiert objektiv und herstellerunabhängig Technologien wie DDR DRAMs, CiDDR DRAMs, SL=DRAM, Direct Rambus, SSTL Interfaces und MP-DRAMs. Der aktuellste verfügbare Beitrag zu einem enorm wichtigen Thema! (12/98)

Currently, the term 3D integration includes a wide variety of different integration methods, such as 2.5-dimensional (2.5D) interposer-based integration, 3D integrated circuits (3D ICs), 3D systems-in-package (SiP), 3D heterogeneous integration, and monolithic 3D ICs. The goal of this book is to provide readers with an understanding of the latest challenges and issues in 3D integration. TSVs are not the only technology element needed for 3D integration. There are numerous other key enabling technologies required for 3D integration, and the speed of the development in this emerging field is very rapid. To provide readers with state-of-the-art information on 3D integration research and technology developments, each chapter has been contributed by some of the world’s leading scientists and experts from academia, research institutes, and industry from around the globe. Covers chip/wafer level 3D integration technology, memory stacking, reconfigurable 3D, and monolithic 3D IC. Discusses the use of silicon interposer and organic interposer. Presents architecture, design, and technology implementations for 3D FPGA integration. Describes oxide bonding, Cu/SiO2 hybrid bonding, adhesive bonding, and solder bonding. Addresses the issue of thermal dissipation in 3D integration.

Synthesising fifteen years of research, this authoritative text provides a comprehensive treatment of two major technologies for wireless chip and module interface design, covering technology fundamentals, design considerations and tradeoffs, practical implementation considerations, and discussion of practical applications in neural network, reconfigurable processors, and stacked SRAM. It explains the design principles and applications of two near-field wireless interface technologies for 2.5-3D IC and module integration respectively, and describes system-level performance benefits, making this an essential resource for researchers, professional engineers and graduate students performing research in next-generation wireless chip and module interface design.

The emerging three-dimensional (3D) chip architectures, with their intrinsic capability of reducing the wire length, promise attractive solutions to reduce the delay of interconnects in future microprocessors. 3D memory stacking enables much higher memory bandwidth for future chip-multiprocessor design, mitigating the "memory wall" problem. In addition, heterogenous integration enabled by 3D technology can also result in innovative designs for future microprocessors. This book first provides a brief introduction to this emerging technology, and then presents a variety of approaches to designing future 3D microprocessor systems, by leveraging the benefits of low latency, high bandwidth, and heterogeneous integration capability which are offered by 3D technology.