In this volume, we have put together papers spanning a broad range — from the area of modeling of strain and misfit dislocation densities, microwave absorption characteristics of nanocomposites, to X-ray diffraction studies.Specific topics in this volume include:In summary, papers selected in this volume cover various aspects of high performance logic and circuits for high-speed electronic systems.

In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics.In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.

This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.

MOS technology has rapidly become the de facto standard for mixed-signal integrated circuit design due to the high levels of integration possible as device geometries shrink to nanometer scales. The reduction in feature size means that the number of transistor and clock speeds have increased significantly. In fact, current day microprocessors contain hundreds of millions of transistors operating at multiple gigahertz. Furthermore, this reduction in feature size also has a significant impact on mixed-signal circuits. Due to the higher levels of integration, the majority of ASICs possesses some analog components. It has now become nearly mandatory to integrate both analog and digital circuits on the same substrate due to cost and power constraints. This book presents some of the newer problems and opportunities offered by the small device geometries and the high levels of integration that is now possible.The aim of this book is to summarize some of the most critical aspects of high-speed analog/RF communications circuits. Attention is focused on the impact of scaling, substrate noise, data converters, RF and wireless communication circuits and wireline communication circuits, including high-speed I/O.

High-Performance Digital VLSI Circuit Design is the first book devoted entirely to the design of digital high-performance VLSI circuits. CMOS, BiCMOS and bipolar ciruits are covered in depth, including state-of-the-art circuit structures. Recent advances in both the computer and telecommunications industries demand high-performance VLSI digital circuits. Digital processing of signals demands high-speed circuit techniques for the GHz range. The design of such circuits represents a great challenge; one that is amplified when the power supply is scaled down to 3.3 V. Moreover, the requirements of low-power/high-performance circuits adds an extra dimension to the design of such circuits. High-Performance Digital VLSI Circuit Design is a self-contained text, introducing the subject of high-performance VLSI circuit design and explaining the speed/power tradeoffs. The first few chapters of the book discuss the necessary background material in the area of device design and device modeling, respectively. High-performance CMOS circuits are then covered, especially the new all-N-logic dynamic circuits. Propagation delay times of high-speed bipolar CML and ECL are developed analytically to give a thorough understanding of various interacting process, device and circuit parameters. High-current phenomena of bipolar devices are also addressed as these devices typically operate at maximum currents for limited device area. Different, new, high-performance BiCMOS circuits are presented and compared to their conventional counterparts. These new circuits find direct applications in the areas of high-speed adders, frequency dividers, sense amplifiers, level-shifters, input/output clock buffers and PLLs. The book concludes with a few system application examples of digital high-performance VLSI circuits. Audience: A vital reference for practicing IC designers. Can be used as a text for graduate and senior undergraduate students in the area.

This book describes design techniques that can be used to mitigate crosstalk in high-speed I/O circuits. The focus of the book is in developing compact and low power integrated circuits for crosstalk cancellation, inter-symbol interference (ISI) mitigation and improved bit error rates (BER) at higher speeds. This book is one of the first to discuss in detail the problem of crosstalk and ISI mitigation encountered as data rates have continued beyond 10Gb/s. Readers will learn to avoid the data performance cliff, with circuits and design techniques described for novel, low power crosstalk cancellation methods that are easily combined with current ISI mitigation architectures.

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. Sample Chapter(s). Chapter 1: Simulation and Experimental Results on Gan Based Ultra-Short Planar Negative Differential Conductivity Diodes for THZ Power Generation (563 KB). Contents: Simulation and Experimental Results on GaN Basee Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation (B Aslan et al.); Millimeter Wave to Terahertz in CMOS (K K O S Sankaran et al.); Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination (V S Chivukula et al.); The First 70nm 6-Inch GaAs PHEMT MMIC Process (H Karimy et al.); Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces (K Tang et al.); GaN Transistors for Power Switching and Millimeter-Wave Applications (T Ueda et al.); Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles (D P Urciuoli & V Veliadis); and other papers. Readership: Electronic engineers, solid state physicists, graduate students studying physics or electrical engineering.