Heterogeneous integration uses packaging technology to integrate dissimilar chips, LED, MEMS, VCSEL, etc. from different fabless houses and with different functions and wafer sizes into a single system or subsystem. How are these dissimilar chips and optical components supposed to talk to each other? The answer is redistribution layers (RDLs). This book addresses the fabrication of RDLs for heterogeneous integrations, and especially focuses on RDLs on: A) organic substrates, B) silicon substrates (through-silicon via (TSV)-interposers), C) silicon substrates (bridges), D) fan-out substrates, and E) ASIC, memory, LED, MEMS, and VCSEL systems. The book offers a valuable asset for researchers, engineers, and graduate students in the fields of semiconductor packaging, materials sciences, mechanical engineering, electronic engineering, telecommunications, networking, etc.

The book focuses on the design, materials, process, fabrication, and reliability of chiplet design and heterogeneous integraton packaging. Both principles and engineering practice have been addressed, with more weight placed on engineering practice. This is achieved by providing in-depth study on a number of major topics such as chip partitioning, chip splitting, multiple system and heterogeneous integration with TSV-interposers, multiple system and heterogeneous integration with TSV-less interposers, chiplets lateral communication, system-in-package, fan-out wafer/panel-level packaging, and various Cu-Cu hybrid bonding. The book can benefit researchers, engineers, and graduate students in fields of electrical engineering, mechanical engineering, materials sciences, and industry engineering, etc.

TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters. A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology. - Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology - Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods - Offers a systematic and comparative literature review of HR-Si interposer technology by topic - Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems - Gives a systematic and accessible accounting on this leading technology

The book focuses on the design, materials, process, fabrication, and reliability of advanced semiconductor packaging components and systems. Both principles and engineering practice have been addressed, with more weight placed on engineering practice. This is achieved by providing in-depth study on a number of major topics such as system-in-package, fan-in wafer/panel-level chip-scale packages, fan-out wafer/panel-level packaging, 2D, 2.1D, 2.3D, 2.5D, and 3D IC integration, chiplets packaging, chip-to-wafer bonding, wafer-to-wafer bonding, hybrid bonding, and dielectric materials for high speed and frequency. The book can benefit researchers, engineers, and graduate students in fields of electrical engineering, mechanical engineering, materials sciences, and industry engineering, etc.

This comprehensive guide to fan-out wafer-level packaging (FOWLP) technology compares FOWLP with flip chip and fan-in wafer-level packaging. It presents the current knowledge on these key enabling technologies for FOWLP, and discusses several packaging technologies for future trends. The Taiwan Semiconductor Manufacturing Company (TSMC) employed their InFO (integrated fan-out) technology in A10, the application processor for Apple’s iPhone, in 2016, generating great excitement about FOWLP technology throughout the semiconductor packaging community. For many practicing engineers and managers, as well as scientists and researchers, essential details of FOWLP – such as the temporary bonding and de-bonding of the carrier on a reconstituted wafer/panel, epoxy molding compound (EMC) dispensing, compression molding, Cu revealing, RDL fabrication, solder ball mounting, etc. – are not well understood. Intended to help readers learn the basics of problem-solving methods and understand the trade-offs inherent in making system-level decisions quickly, this book serves as a valuable reference guide for all those faced with the challenging problems created by the ever-increasing interest in FOWLP, helps to remove roadblocks, and accelerates the design, materials, process, and manufacturing development of key enabling technologies for FOWLP.

Currently, the term 3D integration includes a wide variety of different integration methods, such as 2.5-dimensional (2.5D) interposer-based integration, 3D integrated circuits (3D ICs), 3D systems-in-package (SiP), 3D heterogeneous integration, and monolithic 3D ICs. The goal of this book is to provide readers with an understanding of the latest challenges and issues in 3D integration. TSVs are not the only technology element needed for 3D integration. There are numerous other key enabling technologies required for 3D integration, and the speed of the development in this emerging field is very rapid. To provide readers with state-of-the-art information on 3D integration research and technology developments, each chapter has been contributed by some of the world’s leading scientists and experts from academia, research institutes, and industry from around the globe. Covers chip/wafer level 3D integration technology, memory stacking, reconfigurable 3D, and monolithic 3D IC. Discusses the use of silicon interposer and organic interposer. Presents architecture, design, and technology implementations for 3D FPGA integration. Describes oxide bonding, Cu/SiO2 hybrid bonding, adhesive bonding, and solder bonding. Addresses the issue of thermal dissipation in 3D integration.

High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. - Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations - Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability - Provides a broad overview of the topic, from materials integration to circuits