Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by quantum confinement. The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures.

Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by quantum confinement. The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures.

Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.

Graphene has emerged as a potential candidate to replace traditional CMOS for a number of electronic applications; this book presents the latest advances in graphene nanoelectronics and the potential benefits of using graphene in a wide variety of electronic applications. The book also provides details on various methods to grow graphene, including epitaxial, CVD, and chemical methods. This book serves as a spring-board for anyone trying to start working on graphene. The book is also suitable to experts who wish to update themselves with the latest findings in the field.

The need for post-CMOS nanoelectronics has led to the investigation of innovative device structures and materials. Graphene, a zero bandgap semiconductor with ballistic transport properties, has great potential to extend diversification and miniaturization beyond the limits of CMOS. The goal of this work is to study the growth of graphene on SiC using the novel method of selective graphitization. The major contributions of this research are as follows - First, epitaxial graphene is successfully grown on selected regions of SiC not capped by AlN deposited by molecular beam epitaxy. This contribution enables the formation of electronic-grade graphene in desired patterns without having to etch the graphene or expose it to any detrimental contact with external chemicals. Etching of AlN opens up windows to the SiC in desirable patterns for subsequent graphitization without leaving etch-residues (determined by XPS). Second, the impact of process parameters on the growth of graphene is investigated. Temperature, time, and argon pressure are the primary growth-conditions altered. A temperature of 1400oC in 1 mbar argon for 20 min produced the most optimal graphene growth without significant damage to the AlN capping-layer. Third, first-ever electronic transport measurements are achieved on the selective epitaxial graphene. Hall mobility of about 1550 cm2/Vs has been obtained to date. Finally, the critical limitations of the selective epitaxial graphene growth are enumerated. The advent of enhanced processing techniques that will overcome these limitations will create a multitude of opportunities for applications for graphene grown in this manner. It is envisaged to be a viable approach to fabrication of radio-frequency field-effect transistors.

This book provides a state of the art report of the knowledge accumulated in graphene research. The fascination with graphene has been growing very rapidly in recent years and the physics of graphene is now becoming one of the most interesting as well as the most fast-moving topics in condensed-matter physics. The Nobel prize in physics awarded in 2010 has given a tremendous impetus to this topic. The horizon of the physics of graphene is ever becoming wider, where physical concepts go hand in hand with advances in experimental techniques. Thus this book is expanding the interests to not only transport but optical and other properties for systems that include multilayer as well as monolayer graphene systems. The book comprises experimental and theoretical knowledge. The book is also accessible to graduate students.

This unique multidisciplinary 8-volume set focuses on the emerging issues concerning graphene materials and provides a shared platform for both researcher and industry. The Handbook of Graphene comprises a set of 8 individual volumes that brings an interdisciplinary perspective to accomplish a more detailed understanding of the interplay between the synthesis, structure, characterization, processing, applications and performance of the advanced materials. The Handbook of Graphene comprises 140 chapters from world renowned experts. Volume 1 is solely focused on Growth, Synthesis, and Functionalization of Graphene. Some of the important topics include but not limited to: Graphite in metallic materials-growths, structures and defects of spheroidal graphite in ductile iron; synthesis and quality optimization; methods of synthesis and physico-chemical properties of fluorographenes; graphene-SiC reinforced hybrid composite foam: response to high strain rate deformation; atomic structure and electronic properties of few-layer graphene on SiC(001); features and prospects for epitaxial graphene on SiC; graphitic carbon/graphene on Si(111) via direct deposition of solid-state carbon atoms: growth mechanism and film characterization; chemical reactivity and variation in electronical properties of graphene on Ni(111) and reduced graphene oxide; chlorophyll and graphene: a new paradigm of biomimetic symphony; graphene structures: from preparations to applications; three-dimensional graphene-based structures: production methods, properties and applications; electrochemistry of graphene materials; hydrogen functionalized graphene nanostructure material for spintronic application; the impact of uniaxial strain and defect pattern on magnetoelectronic and transport properties of graphene; exploiting graphene as an efficient catalytic template for organic transformations: synthesis, characterization and activity evaluation of graphene-based catalysts; exfoliated graphene based 2D materials; synthesis and catalytic behaviors; functionalization of graphene with molecules and/or nanoparticles for advanced applications; carbon allotropes "between diamond and graphite": how to create semiconductor properties in graphene and related structures.