This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.

This issue of ECS Transactions covers emerging electronic materials and concepts, including but not limited to, beyond CMOS integration schemes/technology development and on the impact of nontraditional materials such as optical, laser, RF, and other non-conventional devices in nanoelectronics. Topics include grapheme material properties, preparation, synthesis, and growth; Ge and SiGe devices for PMOS mobility enhancement for next generation CMOS and other devices beyond strain engineering, III-V heterostructures on Si substrates.

This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.

This book provides a systematic presentation of the principles and practices behind the synthesis and functionalization of graphene and grapheme oxide (GO), as well as the fabrication techniques for transparent conductors from these materials. Transparent conductors are used in a wide variety of photoelectronic and photovoltaic devices, such as liquid crystal displays (LCDs), solar cells, optical communication devices, and solid-state lighting. Thin films made from indium tin oxide (ITO) have thus far been the dominant source of transparent conductors, and now account for 50% of indium consumption. However, the price of Indium has increased 1000% in the last 10 years. Graphene, a two-dimensional monolayer of sp2-bonded carbon atoms, has attracted significant interest because of its unique transport properties. Because of their high optical transmittance and electrical conductivity, thin film electrodes made from graphene nanosheets have been considered an ideal candidate to replace expensive ITO films. Graphene for Transparent Conductors offers a systematic presentation of the principles, theories and technical practices behind the structure–property relationship of the thin films, which are the key to the successful development of high-performance transparent conductors. At the same time, the unique perspectives provided in the applications of graphene and GO as transparent conductors will serve as a general guide to the design and fabrication of thin film materials for specific applications.