Silicon-Germanium Strained Layers and Heterostructures
Title | Silicon-Germanium Strained Layers and Heterostructures PDF eBook |
Author | M. Willander |
Publisher | Elsevier |
Pages | 325 |
Release | 2003-10-02 |
Genre | Technology & Engineering |
ISBN | 008054102X |
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers
Germanium-silicon Strained Layers and Heterostructures
Title | Germanium-silicon Strained Layers and Heterostructures PDF eBook |
Author | Suresh C. Jain |
Publisher | |
Pages | 328 |
Release | 1994 |
Genre | Science |
ISBN |
Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Semiconductors and Semimetals
Title | Semiconductors and Semimetals PDF eBook |
Author | Robert K. Willardson |
Publisher | |
Pages | |
Release | 1966 |
Genre | |
ISBN | 9780127521169 |
Silicon-Germanium Strained Layers and Heterostructures
Title | Silicon-Germanium Strained Layers and Heterostructures PDF eBook |
Author | M. Willander |
Publisher | Academic Press |
Pages | 322 |
Release | 2003-10-20 |
Genre | Technology & Engineering |
ISBN | 9780127521831 |
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers
Applications of Silicon-Germanium Heterostructure Devices
Title | Applications of Silicon-Germanium Heterostructure Devices PDF eBook |
Author | C.K Maiti |
Publisher | CRC Press |
Pages | 402 |
Release | 2001-07-20 |
Genre | Science |
ISBN | 1420034693 |
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Germanium Silicon: Physics and Materials
Title | Germanium Silicon: Physics and Materials PDF eBook |
Author | |
Publisher | Academic Press |
Pages | 459 |
Release | 1998-11-09 |
Genre | Technology & Engineering |
ISBN | 0080864546 |
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Germanium-silicon Strained Layers and Heterostructures
Title | Germanium-silicon Strained Layers and Heterostructures PDF eBook |
Author | Suresh C. Jain |
Publisher | |
Pages | 328 |
Release | 1994 |
Genre | Science |
ISBN |
Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.