Wide Bandgap Semiconductor Power Devices
Title | Wide Bandgap Semiconductor Power Devices PDF eBook |
Author | B. Jayant Baliga |
Publisher | Woodhead Publishing |
Pages | 420 |
Release | 2018-10-17 |
Genre | Technology & Engineering |
ISBN | 0081023073 |
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Gallium Nitride and Related Wide Bandgap Materials and Devices
Title | Gallium Nitride and Related Wide Bandgap Materials and Devices PDF eBook |
Author | R. Szweda |
Publisher | Elsevier |
Pages | 459 |
Release | 2000-07-07 |
Genre | Business & Economics |
ISBN | 0080532306 |
The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
GaN-based Materials and Devices
Title | GaN-based Materials and Devices PDF eBook |
Author | Michael Shur |
Publisher | World Scientific |
Pages | 310 |
Release | 2004 |
Genre | Technology & Engineering |
ISBN | 9789812562364 |
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Optoelectronic Devices
Title | Optoelectronic Devices PDF eBook |
Author | M Razeghi |
Publisher | Elsevier |
Pages | 602 |
Release | 2004 |
Genre | Science |
ISBN | 9780080444260 |
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Ultra-wide Bandgap Semiconductor Materials
Title | Ultra-wide Bandgap Semiconductor Materials PDF eBook |
Author | Meiyong Liao |
Publisher | Elsevier |
Pages | 506 |
Release | 2019-06-18 |
Genre | Technology & Engineering |
ISBN | 0128172568 |
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Wide Energy Bandgap Electronic Devices
Title | Wide Energy Bandgap Electronic Devices PDF eBook |
Author | Fan Ren |
Publisher | World Scientific |
Pages | 526 |
Release | 2003 |
Genre | Technology & Engineering |
ISBN | 9812382461 |
Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.
Gallium Nitride Processing for Electronics, Sensors and Spintronics
Title | Gallium Nitride Processing for Electronics, Sensors and Spintronics PDF eBook |
Author | Stephen J. Pearton |
Publisher | Springer |
Pages | 0 |
Release | 2010-10-22 |
Genre | Technology & Engineering |
ISBN | 9781849969659 |
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.