GaAs-based Epitaxial Structures for Heterojunction Bipolar Transistors with Increased Efficiency

GaAs-based Epitaxial Structures for Heterojunction Bipolar Transistors with Increased Efficiency
Title GaAs-based Epitaxial Structures for Heterojunction Bipolar Transistors with Increased Efficiency PDF eBook
Author Rebecca Jane Welty
Publisher
Pages 332
Release 2002
Genre
ISBN

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Gallium and Gallium Arsenide

Gallium and Gallium Arsenide
Title Gallium and Gallium Arsenide PDF eBook
Author Deborah A. Kramer
Publisher
Pages 36
Release 1988
Genre Gallium arsenide industry
ISBN

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Molecular Beam Epitaxy

Molecular Beam Epitaxy
Title Molecular Beam Epitaxy PDF eBook
Author Mohamed Henini
Publisher Elsevier
Pages 790
Release 2018-06-27
Genre Science
ISBN 0128121378

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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

High Speed Heterostructure Devices

High Speed Heterostructure Devices
Title High Speed Heterostructure Devices PDF eBook
Author
Publisher Academic Press
Pages 481
Release 1994-07-06
Genre Technology & Engineering
ISBN 0080864384

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Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. - The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed - Offers a complete, three-chapter review of resonant tunneling - Provides an emphasis on circuits as well as devices

Information Circular

Information Circular
Title Information Circular PDF eBook
Author
Publisher
Pages 430
Release 1988
Genre Mines and mineral resources
ISBN

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Chemical Abstracts

Chemical Abstracts
Title Chemical Abstracts PDF eBook
Author
Publisher
Pages 2002
Release 2002
Genre Chemistry
ISBN

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Current Trends in Heterojunction Bipolar Transistors

Current Trends in Heterojunction Bipolar Transistors
Title Current Trends in Heterojunction Bipolar Transistors PDF eBook
Author M. F. Chang
Publisher World Scientific
Pages 448
Release 1996
Genre Technology & Engineering
ISBN 9789810220976

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Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.