Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

From materials science to integrated circuit development, much of modern technology is moving from the microscale toward the nanoscale. This book focuses on the fundamental physics underlying innovative techniques for analyzing surfaces and near-surfaces. New analytical techniques have emerged to meet these technological requirements, all based on a few processes that govern the interactions of particles and radiation with matter. This book addresses the fundamentals and application of these processes, from thin films to field effect transistors.

During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Overall, this book presents a detailed and comprehensive overview of the state-of-the-art development of different nanoscale intelligent materials for advanced applications. Apart from fundamental aspects of fabrication and characterization of nanomaterials, it also covers key advanced principles involved in utilization of functionalities of these nanomaterials in appropriate forms. It is very important to develop and understand the cutting-edge principles of how to utilize nanoscale intelligent features in the desired fashion. These unique nanoscopic properties can either be accessed when the nanomaterials are prepared in the appropriate form, e.g., composites, or in integrated nanodevice form for direct use as electronic sensing devices. In both cases, the nanostructure has to be appropriately prepared, carefully handled, and properly integrated into the desired application in order to efficiently access its intelligent features. These aspects are reviewed in detail in three themed sections with relevant chapters: Nanomaterials, Fabrication and Biomedical Applications; Nanomaterials for Energy, Electronics, and Biosensing; Smart Nanocomposites, Fabrication, and Applications.

This book covers recent trends in the field of devices, wireless communication and networking. It gathers selected papers presented at the International Conference on Communication, Devices and Networking (ICCDN 2019), which was organized by the Department of Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim, India, on 9–10 December 2019. Gathering cutting-edge research papers prepared by researchers, engineers and industry professionals, it will help young and experienced scientists and developers alike to explore new perspectives, and offer them inspirations on how to address real-world problems in the areas of electronics, communication, devices and networking.

Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book:  Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices  Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs  Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices  Includes rigorous mathematical derivations of the semiconductor physics  Illustrates major concepts thorough discussions and various diagrams