Fundamentals of III-V Semiconductor MOSFETs
Title | Fundamentals of III-V Semiconductor MOSFETs PDF eBook |
Author | Serge Oktyabrsky |
Publisher | Springer Science & Business Media |
Pages | 451 |
Release | 2010-03-16 |
Genre | Technology & Engineering |
ISBN | 1441915478 |
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
III–V Compound Semiconductors and Devices
Title | III–V Compound Semiconductors and Devices PDF eBook |
Author | Keh Yung Cheng |
Publisher | Springer Nature |
Pages | 537 |
Release | 2020-11-08 |
Genre | Technology & Engineering |
ISBN | 3030519031 |
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
The Development of III-V Semiconductor MOSFETs for Future CMOS Applications
Title | The Development of III-V Semiconductor MOSFETs for Future CMOS Applications PDF eBook |
Author | Andrew M. Greene |
Publisher | |
Pages | 179 |
Release | 2015 |
Genre | Compound semiconductors |
ISBN |
III-V Integrated Circuit Fabrication Technology
Title | III-V Integrated Circuit Fabrication Technology PDF eBook |
Author | Shiban Tiku |
Publisher | CRC Press |
Pages | 706 |
Release | 2016-04-27 |
Genre | Science |
ISBN | 9814669318 |
GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing
Fundamentals of Tunnel Field-Effect Transistors
Title | Fundamentals of Tunnel Field-Effect Transistors PDF eBook |
Author | Sneh Saurabh |
Publisher | CRC Press |
Pages | 216 |
Release | 2016-10-26 |
Genre | Science |
ISBN | 1315350262 |
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Handbook for III-V High Electron Mobility Transistor Technologies
Title | Handbook for III-V High Electron Mobility Transistor Technologies PDF eBook |
Author | D. Nirmal |
Publisher | CRC Press |
Pages | 430 |
Release | 2019-05-14 |
Genre | Science |
ISBN | 0429862539 |
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Fundamentals Of Nanotransistors
Title | Fundamentals Of Nanotransistors PDF eBook |
Author | Mark S Lundstrom |
Publisher | World Scientific Publishing Company |
Pages | 389 |
Release | 2017-07-11 |
Genre | Technology & Engineering |
ISBN | 981457175X |
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.