Due to the continuous power supply reduction, Charge Pumps, also referred to as DC-DC converters, circuits are widely used in integrated circuits (ICs) to generate high voltages for many applications, such as EEP-ROMs, Flash memories for programming and erasing of the floating gate, switched capacitor circuits, operational amplifiers, voltage regulators, LCD drivers, piezoelectricactuators, etc. A charge pump is a kind of DC to DC converter that uses capacitors as energy storage elements to create either a higher or lower voltage power source. The development of the charge pumps is motivated by ever increasing the needs for the small form factor (i.e small size and low weight), high-conversion-efficiency and low costpower management system, which is the best candidate suitable to meet the needs of continuosly shrinking portable electronic devices like MP3 players, cellular phones, PDA's.

CMOS DC-DC Converters aims to provide a comprehensive dissertation on the matter of monolithic inductive Direct-Current to Direct-Current (DC-DC) converters. For this purpose seven chapters are defined which will allow the designer to gain specific knowledge on the design and implementation of monolithic inductive DC-DC converters, starting from the very basics.

This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.

LNA-ESD Co-Design for Fully Integrated CMOS Wireless Receivers fits in the quest for complete CMOS integration of wireless receiver front-ends. With a combined discussion of both RF and ESD performance, it tackles one of the final obstacles on the road to CMOS integration. The book is conceived as a design guide for those actively involved in the design of CMOS wireless receivers. The book starts with a comprehensive introduction to the performance requirements of low-noise amplifiers in wireless receivers. Several popular topologies are explained and compared with respect to future technology and frequency scaling. The ESD requirements are introduced and related to the state-of-the-art protection devices and circuits. LNA-ESD Co-Design for Fully Integrated CMOS Wireless Receivers provides an extensive theoretical treatment of the performance of CMOS low-noise amplifiers in the presence of ESD-protection circuitry. The influence of the ESD-protection parasitics on noise figure, gain, linearity, and matching are investigated. Several RF-ESD co-design solutions are discussed allowing both high RF-performance and good ESD-immunity for frequencies up to and beyond 5 GHz. Special attention is also paid to the layout of both active and passive components. LNA-ESD Co-Design for Fully Integrated CMOS Wireless Receivers offers the reader intuitive insight in the LNA’s behavior, as well as the necessary mathematical background to optimize its performance. All material is experimentally verified with several CMOS implementations, among which a fully integrated GPS receiver front-end. The book is essential reading for RF design engineers and researchers in the field and is also suitable as a text book for an advanced course on the subject.

This book enables readers to gain a deep understanding of the challenges related to the design of a charge pump (CP). Analysis, modeling, design strategies and topologies are treated in detail. Novel and high-performance CP topologies and related design are organized in a coherent manner, with particular care devoted to ultra-low power and energy harvesting applications. The authors provide basic theoretical foundations as needed, in order to set the stage for readers’ comprehension of analyses and results. Exhaustive methodologies are presented and analytical derivations are included, enabling readers to gain insight on the main dependencies among the relevant circuit parameters. Although the material is presented in a formal and theoretical manner, emphasis is on the design perspective, using many practical examples and measured results.

MOS technology has rapidly become the de facto standard for mixed-signal integrated circuit design due to the high levels of integration possible as device geometries shrink to nanometer scales. The reduction in feature size means that the number of transistor and clock speeds have increased significantly. In fact, current day microprocessors contain hundreds of millions of transistors operating at multiple gigahertz. Furthermore, this reduction in feature size also has a significant impact on mixed-signal circuits. Due to the higher levels of integration, the majority of ASICs possesses some analog components. It has now become nearly mandatory to integrate both analog and digital circuits on the same substrate due to cost and power constraints. This book presents some of the newer problems and opportunities offered by the small device geometries and the high levels of integration that is now possible.The aim of this book is to summarize some of the most critical aspects of high-speed analog/RF communications circuits. Attention is focused on the impact of scaling, substrate noise, data converters, RF and wireless communication circuits and wireline communication circuits, including high-speed I/O.