Gives basic and up-to-date information about noise sources in electronic devices. Demonstrates how this information can be used to calculate the noise performance, in particular the noise figure, of electronic circuits using these devices. Optimization procedures, both for the circuits and for the devices, are then devised based on these data. Gives an elementary treatment of thermal noise, diffusion noise, and velocity-fluctuation noise, including quantum effects in thermal noise and maser noise.

The replacement of thermionic devices by solid-state devices did not affect the fundamentals of thermal noise and shot noise but introduced a new range of applications and some new phenomena which is the subject of this book. Among the latter are generation-recombination noise, the still controversial 1/f noise, noise in avalanche devices and transferred-electron devices. Besides such semiconductor devices, also considered is noise in cryogenic devices, in charge-coupled devices, in ferromagnetic and ferroelectric materials and in radiation detectors.

1/F NOISE IN UNIMPLANTED MOSFETs is also of the number fluctuations type. 1/f noise in JFETs is so small that it is almost unobservable. 1/f noise in buried channel MOSFETs is smaller than in diffused MOSFETs. Hot electron noise was observed in buried channel MOSFETs and in short channel JFETs. In the latter case it si masked by generation-combination noise due to partly ionized donors below 120 K. Low-frequency noise in GaAs current limiters is one-dimensional diffusion noise governed by an activation energy that is voltage dependent. Modulation-doped GaAs FETs (HEMTs) have a sizeable amount of 1/f noise, probably of the number fluctuations type and thermal noise at higher frequencies. Short n(+)-n( - )-n(+) GaAs diodes have a linear characteristic, higher frequencies. The high-frequency behavior of short n(+)-n( - )-n(+)GaAs diodes and of short n(+)-n( - )-grid-n( - )-n(+) solid state diodes was estimated; picosecond electronics seems feasible.

This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.