This book provides the reader with some insights into the many styles of field effect transistors (FETs) being used. It offers a rudimentary understanding of their operation and performance. The book explains the complex terminology that defines the various FET parameters.

This book provides the reader with some insights into the many styles of field effect transistors (FETs) being used. It offers a rudimentary understanding of their operation and performance. The book explains the complex terminology that defines the various FET parameters.

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

The topic of bipolar compatible CMOS (BiCMOS) is a fascinating one and of ever-growing practical importance. The "technology pendulum" has swung from the two extremes of preeminence of bipolar in the 1950s and 60s to the apparent endless horizons for VLSI NMOS technology during the 1970s and 80s. Yet starting in the 1980s severallimits were clouding the horizon for pure NMOS technology. CMOS reemerged as a· viable high density, high performance technology. Similarly by the mid 1980s scaled bipolar devices had not only demonstrated new high speed records, but early versions of mixed bipolar/CMOS technology were being produced. Hence the paradigm of either high density . Q[ high speed was metamorphasizing into an opportunity for both speed and density via a BiCMOS approach. Now as we approach the 1990s there have been a number of practical demonstrations of BiCMOS both for memory and logic applications and I expect the trend to escalate over the next decade. This book makes a timely contribution to the field of BiCMOS technology and circuit development. The evolution is now indeed rapid so that it is difficult to make such a book exhaustive of current developments. Probably equally difficult is the fact that the new technology opens a range of novel circuit opportunities that are as yet only formative in their development. Given these obstacles it is a herculean task to try to assemble a book on BiCMOS.

This book gives insight into the emerging semiconductor devices from their applications in electronic circuits. It discusses the challenges in the field of engineering and applications of advanced low-power devices. Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes offers essential exposure to low-power devices, and applications in wireless, biosensing, and circuit domains. This book provides a detailed discussion on all aspects, including the current and future scenarios related to the low-power device. The book also presents basic knowledge about field-effect transistor (FET) devices and introduces emerging and novel FET devices. The chapters include a review of the usage of FET devices in various domains like biosensing, wireless, and cryogenics applications. The chapters also explore device-circuit co-design issues in the digital and analog domains. The content is presented in an easy-to-follow manner that makes it ideal for individuals new to the subject. This book is intended for scientists, researchers, and postgraduate students looking for an understanding of device physics, circuits, and systems.