* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.

ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

This comprehensive and insightful book discusses ESD protection circuit design problems from an IC designer's perspective. On-Chip ESD Protection for Integrated Circuits: An IC Design Perspective provides both fundamental and advanced materials needed by a circuit designer for designing ESD protection circuits, including: Testing models and standards adopted by U.S. Department of Defense, EIA/JEDEC, ESD Association, Automotive Electronics Council, International Electrotechnical Commission, etc. ESD failure analysis, protection devices, and protection of sub-circuits Whole-chip ESD protection and ESD-to-circuit interactions Advanced low-parasitic compact ESD protection structures for RF and mixed-signal IC's Mixed-mode ESD simulation-design methodologies for design prediction ESD-to-circuit interactions, and more! Many real world ESD protection circuit design examples are provided. The book can be used as a reference book for working IC designers and as a textbook for students in the IC design field.

Esd in Silicon Integrated Circuits Ajith Amerasekera Charvaka Duvvury Texas Instruments Inc, Dallas, USA Electrostatic Discharge (ESD) effects in silicon integrated circuits have become a major concern as today's high circuit density technologies shrink to sub-micro dimensions. This book provides an understanding of the basic features related to ESD and deals with topics ranging from the physics of devices operating under ESD conditions to approaches for solving and improving ESD performance in advanced ICs. Features include: * Description of the methods used to reproduce ESD-type events in a controlled test environment * Analysis of the behavior of different semiconductor devices under ESD conditions, including the physics and modeling of devices * Detailed study of design and layout requirements for ESD protection circuits * Case studies showing examples of approaches to solving ESD design problems, including failure analysis Covering the state-of-the-art in circuit design for ESD prevention, this practical book is written from an industrial perspective and will appeal to engineers and scientists working in the fields of IC and transistor design. Researchers and advanced students in the fields of device/circuit modeling and semiconductor reliability, seeking to understand the fundamentals of ESD phenomena, will also find this book an invaluable reference source.

It is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologies. First, the thesis introduces the on-chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters. The ESD design window and the I/O schematics for both rail clamping and local clamping ESD schemes are illustrated. Then, the thesis delves into the investigation of the input and output driver devices and examines their robustness under ESD. The input driver's oxide breakdown levels are evaluated in deeply scaled technologies. The output driver's trigger and breakdown voltages are improved appreciably by applying circuit and device design techniques. The ESD device sections first discuss rail-based clamping, a widely used protection scheme. Two diode-based devices, namely the gated diode and substrate diode, are investigated in detail with SOI test structures. Characterization is based on DC current-voltage (I-V), Very Fast Transmission Line Pulse (VF-TLP), capacitance, and leakage measurements. Improvements in performance are realized. Technology computer aided design (TCAD) simulations help understand the physical effects and design tradeoffs. Then, the following section focuses on the local clamping scheme. Two devices, the field-effect diode (FED) and the double-well FED (DWFED), are developed and optimized in an SOI technology. Trigger circuits are designed to improve the turn-on speed. The advantages of local clamping is highlighted and compared with the rail-based clamping. The results show that the FED is a suitable option for power clamping applications and the DWFED is most suitable for pad-based local clamping. The thesis presents an ESD protection design methodology, which takes advantage of the results and techniques from pervious chapters and put each element into a useful format. Based on the correlation of package level and in-lab test results, a design process based on CDM target definition and device optimization, discharge path analysis, parasitic minimization, I/O data rate estimation and finally ESD and performance characterization is used sequentially to systematically realize the overall design goals.

ESD: Circuits and Devices 2nd Edition provides a clear picture of layout and design of digital, analog, radio frequency (RF) and power applications for protection from electrostatic discharge (ESD), electrical overstress (EOS), and latchup phenomena from a generalist perspective and design synthesis practices providing optimum solutions in advanced technologies. New features in the 2nd edition: Expanded treatment of ESD and analog design of passive devices of resistors, capacitors, inductors, and active devices of diodes, bipolar junction transistors, MOSFETs, and FINFETs. Increased focus on ESD power clamps for power rails for CMOS, Bipolar, and BiCMOS. Co-synthesizing of semiconductor chip architecture and floor planning with ESD design practices for analog, and mixed signal applications Illustrates the influence of analog design practices on ESD design circuitry, from integration, synthesis and layout, to symmetry, matching, inter-digitation, and common centroid techniques. Increased emphasis on system-level testing conforming to IEC 61000-4-2 and IEC 61000-4-5. Improved coverage of low-capacitance ESD, scaling of devices and oxide scaling challenges. ESD: Circuits and Devices 2nd Edition is an essential reference to ESD, circuit & semiconductor engineers and quality, reliability &analysis engineers. It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, microelectronics and IC design.

This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs’ ESD safety level, while maximizing RF performance.