It is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologies. First, the thesis introduces the on-chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters. The ESD design window and the I/O schematics for both rail clamping and local clamping ESD schemes are illustrated. Then, the thesis delves into the investigation of the input and output driver devices and examines their robustness under ESD. The input driver's oxide breakdown levels are evaluated in deeply scaled technologies. The output driver's trigger and breakdown voltages are improved appreciably by applying circuit and device design techniques. The ESD device sections first discuss rail-based clamping, a widely used protection scheme. Two diode-based devices, namely the gated diode and substrate diode, are investigated in detail with SOI test structures. Characterization is based on DC current-voltage (I-V), Very Fast Transmission Line Pulse (VF-TLP), capacitance, and leakage measurements. Improvements in performance are realized. Technology computer aided design (TCAD) simulations help understand the physical effects and design tradeoffs. Then, the following section focuses on the local clamping scheme. Two devices, the field-effect diode (FED) and the double-well FED (DWFED), are developed and optimized in an SOI technology. Trigger circuits are designed to improve the turn-on speed. The advantages of local clamping is highlighted and compared with the rail-based clamping. The results show that the FED is a suitable option for power clamping applications and the DWFED is most suitable for pad-based local clamping. The thesis presents an ESD protection design methodology, which takes advantage of the results and techniques from pervious chapters and put each element into a useful format. Based on the correlation of package level and in-lab test results, a design process based on CDM target definition and device optimization, discharge path analysis, parasitic minimization, I/O data rate estimation and finally ESD and performance characterization is used sequentially to systematically realize the overall design goals.

* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.

A comprehensive overview of Sigma-Delta Analog-to-Digital Converters (ADCs) and a practical guide to their design in nano-scale CMOS for optimal performance. This book presents a systematic and comprehensive compilation of sigma-delta converter operating principles, the new advances in architectures and circuits, design methodologies and practical considerations − going from system-level specifications to silicon integration, packaging and measurements, with emphasis on nanometer CMOS implementation. The book emphasizes practical design issues – from high-level behavioural modelling in MATLAB/SIMULINK, to circuit-level implementation in Cadence Design FrameWork II. As well as being a comprehensive reference to the theory, the book is also unique in that it gives special importance on practical issues, giving a detailed description of the different steps that constitute the whole design flow of sigma-delta ADCs. The book begins with an introductory survey of sigma-delta modulators, their fundamentals architectures and synthesis methods covered in Chapter 1. In Chapter 2, the effect of main circuit error mechanisms is analysed, providing the necessary understanding of the main practical issues affecting the performance of sigma-delta modulators. The knowledge derived from the first two chapters is presented in the book as an essential part of the systematic top-down/bottom-up synthesis methodology of sigma-delta modulators described in Chapter 3, where a time-domain behavioural simulator named SIMSIDES is described and applied to the high-level design and verification of sigma-delta ADCs. Chapter 4 moves farther down from system-level to the circuit and physical level, providing a number of design recommendations and practical recipes to complete the design flow of sigma-delta modulators. To conclude the book, Chapter 5 gives an overview of the state-of-the-art sigma-delta ADCs, which are exhaustively analysed in order to extract practical design guidelines and to identify the incoming trends, design challenges as well as practical solutions proposed by cutting-edge designs. Offers a complete survey of sigma-delta modulator architectures from fundamentals to state-of-the art topologies, considering both switched-capacitor and continuous-time circuit implementations Gives a systematic analysis and practical design guide of sigma-delta modulators, from a top-down/bottom-up perspective, including mathematical models and analytical procedures, behavioural modeling in MATLAB/SIMULINK, macromodeling, and circuit-level implementation in Cadence Design FrameWork II, chip prototyping, and experimental characterization. Systematic compilation of cutting-edge sigma-delta modulators Complete description of SIMSIDES, a time-domain behavioural simulator implemented in MATLAB/SIMULINK Plenty of examples, case studies, and simulation test benches, covering the different stages of the design flow of sigma-delta modulators A number of electronic resources, including SIMSIDES, the statistical data used in the state-of-the-art survey, as well as many design examples and test benches are hosted on a companion website Essential reading for Researchers and electronics engineering practitioners interested in the design of high-performance data converters integrated in nanometer CMOS technologies; mixed-signal designers.

“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

This timely and exhaustive study offers a much-needed examination of the scope and consequences of the electronic counterfeit trade. The authors describe a variety of shortcomings and vulnerabilities in the electronic component supply chain, which can result in counterfeit integrated circuits (ICs). Not only does this book provide an assessment of the current counterfeiting problems facing both the public and private sectors, it also offers practical, real-world solutions for combatting this substantial threat. · Helps beginners and practitioners in the field by providing a comprehensive background on the counterfeiting problem; · Presents innovative taxonomies for counterfeit types, test methods, and counterfeit defects, which allows for a detailed analysis of counterfeiting and its mitigation; · Provides step-by-step solutions for detecting different types of counterfeit ICs; · Offers pragmatic and practice-oriented, realistic solutions to counterfeit IC detection and avoidance, for industry and government.