Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. - Atomic-level control of semiconductor microstructures - Molecular beam epitaxy, metal-organic chemical vapor deposition - Quantum wells and quantum wires - Lasers, photon(IR)detectors, heterostructure transistors

This volume, titled Proceedings of the International Materials Symposium on Ce ramic Microstructures: Control at the Atomic Level summarizes the progress that has been achieved during the past decade in understanding and controlling microstructures in ceram ics. A particular emphasis of the symposium, and therefore of this volume, is advances in the characterization, understanding, and control of micro structures at the atomic or near-atomic level. This symposium is the fourth in a series of meetings, held every ten years, devoted to ceramic microstructures. The inaugural meeting took place in 1966, and focussed on the analysis, significance, and production of microstructure; the symposium emphasized the need for, and importance of characterization in achieving a more complete understanding of the physical and chemical characteristics of ceramics. A consensus emerged at that meeting on the critical importance of characterization in achieving a more complete understanding of ceramic properties. That point of view became widely accepted in the ensuing decade. The second meeting took place in 1976 at a time of world-wide energy shortages and thus emphasized energy-related applications of ceramics, and more specifically, microstructure-property relationships of those materials. The third meeting, held in 1986, was devoted to the role that interfaces played both during processing, and in influencing the ultimate properties of single and polyphase ceramics, and ceramic-metal systems.

In this book, the fundamentals of micro- and nanofabrication are described on the basis of the concept of “using gases as a fabrication tool.” Unlike other books available on the subject, this volume assumes only entry-level mathematics, physics, and chemistry of undergraduates or high-school students in science and engineering courses. Necessary theories are plainly explained to help the reader learn about this new attractive field and enable further reading of specialized books. The book is an attractive guide for students, young engineers, and anyone getting involved in micro- and nanofabrication from various fields including physics, electronics, chemistry, and materials sciences.

les Houches This Winter School on "The Physics and Fabrication of Microstructures" originated with a European industrial decision to investigate in some detail the potential of custom-designed microstructures for new devices. Beginning in 1985, GEC and THOMSON started a collaboration on these subjects, supported by an ESPRIT grant from the Commission of the European Com munity. To the outside observer of the whole field, it appears clear that the world effort is very largely based in the United States and Japan. It also appears that cooperation and dissemination of results are very well organised outside Europe and act as a major influence on the development of new concepts and devices. In Japan, a main research programme of the Research and Development for Basic Technology for Future Industries is focused on "Future Electron Devices". In Japan and in the United States, many workshops are organised annually in order to bring together the major specialists in industry and academia, allowing fast dissemination of advances and contacts for setting up cooperative efforts.

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.

This major work has established itself as the definitive reference in the nanoscience and nanotechnology area in one volume. In presents nanostructures, micro/nanofabrication, and micro/nanodevices. Special emphasis is on scanning probe microscopy, nanotribology and nanomechanics, molecularly thick films, industrial applications and microdevice reliability, and on social aspects. Reflecting further developments, the new edition has grown from six to eight parts. The latest information is added to fields such as bionanotechnology, nanorobotics, and NEMS/MEMS reliability. This classic reference book is orchestrated by a highly experienced editor and written by a team of distinguished experts for those learning about the field of nanotechnology.